INTERFACE STATES AT GA-GAAS INTERFACE

被引：33

作者：

BACHRACH, RZ ^{[1
]}

BIANCONI, A ^{[1
]}

机构：

[1] STANFORD UNIV,DEPT APPL PHYS,STANFORD SYNCHROTRON RADIAT LAB,STANFORD,CA 94305

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1978年 / 15卷 / 02期

关键词：

D O I：

10.1116/1.569461

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：525 / 528

页数：4

共 22 条

[1] SURFACE STOICHIOMETRY AND STRUCTURE OF GAAS
ARTHUR, JR
[J]. SURFACE SCIENCE, 1974, 43 (02) : 449 - 461
[2] BACHRACH RZ, UNPUBLISHED
[3] BACHRACH RZ, 1976, P INT WORKSHOP DEVEL, P9
[4] BACHRACH RZ, 1977, 5 P INT C VAC UV RAD, V2, P212
[5] BACHRACH RZ, 1976, MAT RES SOC S MBE
[6] CHADI DJ, UNPUBLISHED
[7] CHADI DJ, COMMUNICATION
[8] SURFACE-STATES AND METAL OVERLAYERS ON (110) SURFACE OF GAAS
CHELIKOWSKY, JR
LOUIE, SG
COHEN, ML
[J]. SOLID STATE COMMUNICATIONS, 1976, 20 (07) : 641 - 644
[9] MORPHOLOGY OF EPITAXIAL GROWTH OF GAAS BY A MOLECULAR BEAM METHOD - OBSERVATION OF SURFACE STRUCTURES
CHO, AY
[J]. JOURNAL OF APPLIED PHYSICS, 1970, 41 (07) : 2780 - &
[10] SURFACE-STRUCTURES OF COMPOUND SEMICONDUCTORS
DUKE, CB
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (04): : 870 - 877