HIGH DEPOSITION RATE AMORPHOUS SILICON-BASED MULTIJUNCTION SOLAR-CELL

被引：27

作者：

GUHA, S

XU, X

YANG, J

BANERJEE, A

机构：

[1] United Solar Systems Corporation, Troy, MI 48084

来源：

APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 05期

关键词：

D O I：

10.1063/1.114024

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated and optimized the deposition conditions for growth of amorphous silicon (a-Si:H) and silicon-germanium (a-SiGe:H) alloys at high rates using microwave glow discharge. The optimum substrate temperature is found to be higher and deposition pressure lower than the case for materials deposited at low rates using radio-frequency glow discharge. Using the optimized conditions, we report an active-area efficiency of 11.44% for a double-junction, dual-gap a-Si:H alloy solar cell in which the bottom cell incorporates a-SiGe:H alloy deposited at 100 Å/s. © 1995 American Institute of Physics.

引用

页码：595 / 597

页数：3

共 17 条

[1]

GALLAGHER A, 1986, MATER RES SOC S P, V70, P3

[2] DEFECT FORMATION DURING GROWTH OF HYDROGENATED AMORPHOUS-SILICON [J].