LOW-PRESSURE MICROWAVE GLOW-DISCHARGE PROCESS FOR HIGH DEPOSITION RATE AMORPHOUS-SILICON ALLOY

被引:10
作者
HUDGENS, SJ
JOHNCOCK, AG
OVSHINSKY, SR
机构
[1] Energy Conversion Devices Inc, Troy,, MI, USA, Energy Conversion Devices Inc, Troy, MI, USA
关键词
HYDROGENATED AND FLUORINATED AMORPHOUS SILICON - MICROWAVE GLOW DISCHARGE FILM DEPOSITION;
D O I
10.1016/0022-3093(85)90783-5
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
引用
收藏
页码:809 / 812
页数:4
相关论文
共 11 条
[1]  
Chen F F, 1965, PLASMA DIAGNOSTIC TE
[2]   CHARACTERISTICS OF HIGH-FREQUENCY AND DIRECT-CURRENT ARGON DISCHARGES AT LOW-PRESSURES - A COMPARATIVE-ANALYSIS [J].
FERREIRA, CM ;
LOUREIRO, J .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1984, 17 (06) :1175-1188
[3]  
HUDGENS SJ, 1985, UNPUB SPR P MRS M SA
[4]  
KAMPAS FJ, 1984, SEMICONDUCT SEMIMET, V21, P153
[5]   USE OF ELECTRIC PROBES IN SILANE RADIO-FREQUENCY DISCHARGES [J].
MOSBURG, ER ;
KERNS, RC ;
ABELSON, JR .
JOURNAL OF APPLIED PHYSICS, 1983, 54 (09) :4916-4927
[6]  
Ovshinsky S. R., 1983, Proceedings of the International Ion Engineering Congress. The 7th Symposium (1983 International) on Ion Sources and Ion Assisted Technology (ISIAT '83) and the 4th International Conference on Ion and Plasma Assisted Techniques (IPAT '83), P817
[7]   QUANTIFICATION OF HYDROGEN IN A-SI-H FILMS BY IR SPECTROMETRY, N-15 NUCLEAR-REACTION, AND SIMS [J].
ROSS, RC ;
TSONG, IST ;
MESSIER, R ;
LANFORD, WA ;
BURMAN, C .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 20 (03) :406-409
[8]   PLASMA POLYMERIZATION AND DEPOSITION OF AMORPHOUS HYDROGENATED SILICON FROM RF AND DC SILANE PLASMAS [J].
ROSS, RC ;
JAKLIK, J .
JOURNAL OF APPLIED PHYSICS, 1984, 55 (10) :3785-3794
[10]  
Turban G., 1982, PLASMA CHEM PLASMA P, V2, P61, DOI [10.1007/BF00566858, DOI 10.1007/BF00566858]