QUANTIFICATION OF HYDROGEN IN A-SI-H FILMS BY IR SPECTROMETRY, N-15 NUCLEAR-REACTION, AND SIMS

被引：28

作者：

ROSS, RC ^{[1
]}

TSONG, IST ^{[1
]}

MESSIER, R ^{[1
]}

LANFORD, WA ^{[1
]}

BURMAN, C ^{[1
]}

机构：

[1] SUNY ALBANY,DEPT PHYS,ALBANY,NY 12222

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1982年 / 20卷 / 03期

关键词：

D O I：

10.1116/1.571478

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：406 / 409

页数：4

共 16 条

[1]

BRODSKY MH, 1977, PHYS REV B, V16, P3556, DOI 10.1103/PhysRevB.16.3556

[2] QUANTITATIVE-ANALYSIS OF HYDROGEN IN GLOW-DISCHARGE AMORPHOUS SILICON [J].

BRODSKY, MH ;

FRISCH, MA ;

ZIEGLER, JF ;

LANFORD, WA .

APPLIED PHYSICS LETTERS, 1977, 30 (11) :561-563

[3] USE OF NUCLEAR-REACTIONS AND SIMS FOR QUANTITATIVE DEPTH PROFILING OF HYDROGEN IN AMORPHOUS SILICON [J].

CLARK, GJ ;

WHITE, CW ;

ALLRED, DD ;

APPLETON, BR ;

MAGEE, CW ;

CARLSON, DE .

APPLIED PHYSICS LETTERS, 1977, 31 (09) :582-585

[4] HYDROGEN EFFUSION UNDER 6-7-MEV N-15 IONS IRRADIATION IN OXYGEN-CONTAMINATED THIN-FILMS OF SPUTTERED A-SI-H [J].

FALLAVIER, M ;

THOMAS, JP ;

TOUSSET, J ;

MONTEIL, Y ;

BOUIX, J .

APPLIED PHYSICS LETTERS, 1981, 39 (06) :490-492

[5] HYDROGEN CONTENT OF A-GE-H AND A-SI-H AS DETERMINED BY IR SPECTROSCOPY, GAS EVOLUTION AND NUCLEAR-REACTION TECHNIQUES [J].

FANG, CJ ;

GRUNTZ, KJ ;

LEY, L ;

CARDONA, M ;

DEMOND, FJ ;

MULLER, G ;

KALBITZER, S .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) :255-260

[6] INFRARED VIBRATIONAL-SPECTRA OF RF-SPUTTERED HYDROGENATED AMORPHOUS SILICON [J].

FREEMAN, EC ;

PAUL, W .

PHYSICAL REVIEW B, 1978, 18 (08) :4288-4300

[7] CONTROL OF DIHYDRIDE BOND DENSITY IN REACTIVE SPUTTERED AMORPHOUS-SILICON [J].

JEFFREY, FR ;

SHANKS, HR ;

DANIELSON, GC .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (11) :7034-7038

[8] NEW PRECISION TECHNIQUE FOR MEASURING CONCENTRATION VERSUS DEPTH OF HYDROGEN IN SOLIDS [J].

LANFORD, WA ;

TRAUTVETTER, HP ;

ZIEGLER, JF ;

KELLER, J .

APPLIED PHYSICS LETTERS, 1976, 28 (09) :566-568

[9] QUANTITATIVE HYDROGEN DEPTH-PROFILING USING SIMS [J].

LUNDQUIST, TR ;

BURGNER, RP ;

SWANN, PR ;

TSONG, IST .

APPLIED SURFACE SCIENCE, 1981, 7 (1-2) :2-6

[10] HYDROGEN DEPTH PROFILING USING SIMS - PROBLEMS AND THEIR SOLUTIONS [J].

MAGEE, CW ;

BOTNICK, EM .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (01) :47-52

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