ORIGIN OF RESIDUAL SEMICONDUCTOR-LASER LINEWIDTH IN HIGH-POWER LIMIT

被引：14

作者：

KIKUCHI, K

机构：

来源：

ELECTRONICS LETTERS | 1988年 / 24卷 / 16期

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D O I：

10.1049/el:19880681

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

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页码：1001 / 1002

页数：2

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