OXYGEN-ASSOCIATED TRAPPED-HOLE CENTERS IN HIGH-PURITY FUSED SILICAS

被引:404
作者
STAPELBROEK, M
GRISCOM, DL
FRIEBELE, EJ
SIGEL, GH
机构
关键词
D O I
10.1016/0022-3093(79)90079-6
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
引用
收藏
页码:313 / 326
页数:14
相关论文
共 44 条
[1]  
Abragam A., 1970, ELECT PARAMAGNETIC R
[2]  
ARNOLD GW, 1965, PHYS REV, V139, P1234
[3]   RADIATION EFFECTS IN SILICA AT LOW TEMPERATURES [J].
ARNOLD, GW ;
COMPTON, WD .
PHYSICAL REVIEW, 1959, 116 (04) :802-811
[4]   ELECTRONIC STRUCTURE OF DEFECT CENTERS IN SIO2 [J].
BENNETT, AJ ;
ROTH, LM .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1971, 32 (06) :1251-&
[5]  
CAMPBELL DE, 1976, PHYS CHEM GLASSES, V17, P108
[6]   AB INITIO COMPUTATIONS IN ATOMS AND MOLECULES [J].
CLEMENTI, E .
IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1965, 9 (01) :2-&
[7]  
Fowler W. B., 1968, PHYSICS COLOR CTR
[8]  
FRIEBELE EJ, UNPUBLISHED
[9]  
FRIEBELE EJ, 1977, PHYSICS NONCRYSTALLI, P154
[10]  
FRIEBELE EJ, 1976, 2ND P EUR C OPT FIB, P63