ELECTRONIC STRUCTURE OF DEFECT CENTERS IN SIO2

[1] PROPERTIES OF VITREOUS SILICA - ANALYSIS OF RANDOM NETWORK MODELS [J]. NATURE, 1966, 212 (5068) : 1354 - &

[2] BELL T, 1962, PHYS CHEM GLASSES-B, V3, P141

[3] BENNETT AJ, TO BE PUBLISHED

[4] CHARACTERISTICS OF SURFACE-STATE CHARGE (QSS) OF THERMALLY OXIDIZED SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (03) : 266 - +

[5] SILICON-SILICON DIOXIDE SYSTEM [J]. PROCEEDINGS OF THE IEEE, 1969, 57 (09) : 1543 - +

[6] EXTENDED HUCKEL THEORY .3. COMPOUNDS OF BORON + NITROGEN [J]. JOURNAL OF CHEMICAL PHYSICS, 1964, 40 (09) : 2474 - &

[7] AN EXTENDED HUCKEL THEORY .I. HYDROCARBONS [J]. JOURNAL OF CHEMICAL PHYSICS, 1963, 39 (06) : 1397 - &

[8] THEORY OF POLYHEDRAL MOLECULES .1. PHYSICAL FACTORIZATIONS OF SECULAR EQUATION [J]. JOURNAL OF CHEMICAL PHYSICS, 1962, 36 (08) : 2179 - &

[9] SHALLOW IMPURITY STATES IN SILICON AND GERMANIUM [J]. SOLID STATE PHYSICS-ADVANCES IN RESEARCH AND APPLICATIONS, 1957, 5 : 257 - 320

[10] KOOI E, 1966, PHILIPS RES REP, V21, P477

[1] PROPERTIES OF VITREOUS SILICA - ANALYSIS OF RANDOM NETWORK MODELS [J]. NATURE, 1966, 212 (5068) : 1354 - &

[2] BELL T, 1962, PHYS CHEM GLASSES-B, V3, P141

[3] BENNETT AJ, TO BE PUBLISHED

[4] CHARACTERISTICS OF SURFACE-STATE CHARGE (QSS) OF THERMALLY OXIDIZED SILICON [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (03) : 266 - +

[5] SILICON-SILICON DIOXIDE SYSTEM [J]. PROCEEDINGS OF THE IEEE, 1969, 57 (09) : 1543 - +

[6] EXTENDED HUCKEL THEORY .3. COMPOUNDS OF BORON + NITROGEN [J]. JOURNAL OF CHEMICAL PHYSICS, 1964, 40 (09) : 2474 - &

[7] AN EXTENDED HUCKEL THEORY .I. HYDROCARBONS [J]. JOURNAL OF CHEMICAL PHYSICS, 1963, 39 (06) : 1397 - &

[8] THEORY OF POLYHEDRAL MOLECULES .1. PHYSICAL FACTORIZATIONS OF SECULAR EQUATION [J]. JOURNAL OF CHEMICAL PHYSICS, 1962, 36 (08) : 2179 - &

[9] SHALLOW IMPURITY STATES IN SILICON AND GERMANIUM [J]. SOLID STATE PHYSICS-ADVANCES IN RESEARCH AND APPLICATIONS, 1957, 5 : 257 - 320

[10] KOOI E, 1966, PHILIPS RES REP, V21, P477