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ELECTRICAL CHARACTERISTICS OF AIN INSULATING FILMS IN THICKNESS RANGE 40 TO 150A
被引:5
作者
:
LEWICKI, G
论文数:
0
引用数:
0
h-index:
0
LEWICKI, G
MASERJIA.J
论文数:
0
引用数:
0
h-index:
0
MASERJIA.J
机构
:
来源
:
METALLURGICAL TRANSACTIONS
|
1971年
/ 2卷
/ 03期
关键词
:
D O I
:
10.1007/BF02662720
中图分类号
:
TF [冶金工业];
学科分类号
:
0806 ;
摘要
:
引用
收藏
页码:673 / &
相关论文
共 4 条
[1]
A FLOATING GATE AND ITS APPLICATION TO MEMORY DEVICES
KAHNG, D
论文数:
0
引用数:
0
h-index:
0
KAHNG, D
SZE, SM
论文数:
0
引用数:
0
h-index:
0
SZE, SM
[J].
BELL SYSTEM TECHNICAL JOURNAL,
1967,
46
(06):
: 1288
-
+
[2]
LAGRENAUDIE J, 1956, J CHIM PHYS PCB, V53, P222
[3]
CURRENTS THROUGH THIN FILMS OF ALUMINUM NITRIDE
LEWICKI, G
论文数:
0
引用数:
0
h-index:
0
LEWICKI, G
MEAD, CA
论文数:
0
引用数:
0
h-index:
0
MEAD, CA
[J].
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS,
1968,
29
(07)
: 1255
-
&
[4]
CURRENT TRANSPORT AND MAXIMUM DIELECTRIC STRENGTH OF SILICON NITRIDE FILMS
SZE, SM
论文数:
0
引用数:
0
h-index:
0
SZE, SM
[J].
JOURNAL OF APPLIED PHYSICS,
1967,
38
(07)
: 2951
-
+
←
1
→
共 4 条
[1]
A FLOATING GATE AND ITS APPLICATION TO MEMORY DEVICES
KAHNG, D
论文数:
0
引用数:
0
h-index:
0
KAHNG, D
SZE, SM
论文数:
0
引用数:
0
h-index:
0
SZE, SM
[J].
BELL SYSTEM TECHNICAL JOURNAL,
1967,
46
(06):
: 1288
-
+
[2]
LAGRENAUDIE J, 1956, J CHIM PHYS PCB, V53, P222
[3]
CURRENTS THROUGH THIN FILMS OF ALUMINUM NITRIDE
LEWICKI, G
论文数:
0
引用数:
0
h-index:
0
LEWICKI, G
MEAD, CA
论文数:
0
引用数:
0
h-index:
0
MEAD, CA
[J].
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS,
1968,
29
(07)
: 1255
-
&
[4]
CURRENT TRANSPORT AND MAXIMUM DIELECTRIC STRENGTH OF SILICON NITRIDE FILMS
SZE, SM
论文数:
0
引用数:
0
h-index:
0
SZE, SM
[J].
JOURNAL OF APPLIED PHYSICS,
1967,
38
(07)
: 2951
-
+
←
1
→