THEORY OF EXCITON LINEWIDTH IN II-VI SEMICONDUCTOR MIXED-CRYSTALS

被引：85

作者：

ZIMMERMANN, R

机构：

[1] Zentralinstitut für Elektronenphysik, Akademie der Wissenschaften der DDR, DDR-1086 Berlin

来源：

JOURNAL OF CRYSTAL GROWTH | 1990年 / 101卷 / 1-4期

关键词：

Crystals - Quantum Theory;

D O I：

10.1016/0022-0248(90)90993-U

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The disorder-induced broadening of excitons in mixed crystals is discussed, using a novel expression for the relevant exciton volume. Earlier experimental data on CdS1-xSex are successfully explained. The exciton broadening in quantum wells due to well-width fluctuations is obtained along similar lines. © 1989.

引用

页码：346 / 349

页数：4

共 5 条

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[2] EXCITONIC ENERGIES AND INHOMOGENEOUS LINE BROADENING EFFECTS IN INALAS/INGAAS MODULATOR STRUCTURES
HONG, S
SINGH, J
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[3] ENERGY SPECTRUM OF DISORDERED SYSTEMS
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[J]. ADVANCES IN PHYSICS, 1964, 13 (52) : 483 - &
[4] MASLOV AJ, 1982, FIZ TVERD TELA+, V24, P1928
[5] QUANTUM-MECHANICAL THEORY OF LINEWIDTHS OF LOCALIZED RADIATIVE TRANSITIONS IN SEMICONDUCTOR ALLOYS
SINGH, J
BAJAJ, KK
[J]. APPLIED PHYSICS LETTERS, 1986, 48 (16) : 1077 - 1079

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