IMPROVEMENT OF CRYSTALLOGRAPHIC AND ELECTROLUMINESCENT CHARACTERISTICS OF SRS-CE THIN-FILM DEVICES BY POSTDEPOSITION ANNEALING IN AR-S ATMOSPHERE

被引：21

作者：

OHMI, K

FUJIMOTO, K

TANAKA, S

KOBAYASHI, H

机构：

[1] Department of Electrical and Electronic Engineering, Tottori University, Koyama

来源：

JOURNAL OF APPLIED PHYSICS | 1995年 / 78卷 / 01期

关键词：

D O I：

10.1063/1.360621

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Post-deposition annealing in an Ar-S atmosphere at atmospheric pressure has been demonstrated to improve crystallographic properties and electroluminescent (EL) characteristics of SrS:Ce thin film EL devices. Crystallinity and degree of the orientation of the SrS:Ce thin films with polycrystalline columnar grains are improved by the annealing. It seems that recrystallization takes place between SrS grains. For the annealed devices, charge generation in the SrS:Ce layer is suppressed and relaxation of the phosphor field is decreased. As a result, an instantaneous EL efficiency at the leading edge emission is enhanced. The EL luminance and the average EL efficiency are increased. The annealed SrS:Ce thin-film EL device showed a luminance of 800 cd/m2 and an efficiency of 0.42 lm/W at 1 kHz drive. © 1995 American Institute of Physics.

引用

页码：428 / 434

页数：7

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