ZNSMN ELECTROLUMINESCENT THIN-FILMS PREPARED BY MULTISOURCE DEPOSITION UNDER CONTROLLED SULFUR VAPOR-PRESSURE

ZnS:Mn thin-film electroluminescent (TFEL) devices have been prepared by using a multisource deposition (MSD) method. A new technique of sulfur vapor pressure control has been developed for the thin-film growth at a high sulfur vapor pressure. Growth kinetics of ZnS:Mn thin films on the sulfur vapor pressure have been studied. It has been found that at sulfur vapor pressure higher than 0. 1 Pa, the growth rate is limited by the effective amount of the Zn flux. The ZnS:Mn film grown at the sulfur vapor pressure of 0.85 Pa shows a smooth surface and has a uniform grain size of about 200 nm. The ZnS:Mn TFEL device shows the luminance of 300 cd/M2 and the efficiency of 3.5 Im/W at 30 V above the threshold voltage of 180 V with 60 Hz drive.