ZNS-MN ELECTROLUMINESCENT DEVICE PREPARED BY METAL-ORGANIC CHEMICAL VAPOR-DEPOSITION

[1] COMPARISON OF MOCVD-GROWN WITH CONVENTIONAL II-VI MATERIALS PARAMETERS FOR EL THIN-FILMS [J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1984, 81 (02): : 625 - 646

[2] EPITAXIAL-GROWTH OF ZNS ON SI BY METAL ORGANIC-CHEMICAL VAPOR-DEPOSITION [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1985, 24 (12): : 1590 - 1593

[3] AC-THIN FILM ZNS-MN ELECTROLUMINESCENT DEVICE PREPARED BY METAL ORGANIC-CHEMICAL VAPOR-DEPOSITION [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1985, 24 (11): : 1484 - 1487

[4] INOGUCHI T, 1974, 1974 SID INT S, P84

[5] MOLECULAR-BEAM EPITAXIAL ZNSE-MN DC ELECTROLUMINESCENT CELL WITH VERY LOW THRESHOLD VOLTAGE [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (09) : 5797 - 5799

[6] EFFICIENT DC ELECTRO-LUMINESCENCE FROM ZNS-MN AND ZNS-TBF3 THIN-FILMS PREPARED BY RF SPUTTERING [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (10) : 2115 - 2117

[7] Suntola T., 1981, 1981 SID International Symposium. Digest of Papers. Vol.XII, P20

[8] TANIGUCHI K, 1985, P SOC INFORMATION DI, V26, P237

[9] A STUDY OF THE LUMINESCENT AND ELECTRICAL CHARACTERISTICS OF FILMS OF ZNS DOPED WITH MN [J]. JOURNAL OF LUMINESCENCE, 1983, 28 (02) : 147 - 162

[10] THE ORGANO-METALLIC CHEMICAL VAPOR-DEPOSITION OF ZNS AND ZNSE AT ATMOSPHERIC-PRESSURE [J]. JOURNAL OF CRYSTAL GROWTH, 1982, 59 (1-2) : 148 - 154

[1] COMPARISON OF MOCVD-GROWN WITH CONVENTIONAL II-VI MATERIALS PARAMETERS FOR EL THIN-FILMS [J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1984, 81 (02): : 625 - 646

[2] EPITAXIAL-GROWTH OF ZNS ON SI BY METAL ORGANIC-CHEMICAL VAPOR-DEPOSITION [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1985, 24 (12): : 1590 - 1593

[3] AC-THIN FILM ZNS-MN ELECTROLUMINESCENT DEVICE PREPARED BY METAL ORGANIC-CHEMICAL VAPOR-DEPOSITION [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1985, 24 (11): : 1484 - 1487

[4] INOGUCHI T, 1974, 1974 SID INT S, P84

[5] MOLECULAR-BEAM EPITAXIAL ZNSE-MN DC ELECTROLUMINESCENT CELL WITH VERY LOW THRESHOLD VOLTAGE [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (09) : 5797 - 5799

[6] EFFICIENT DC ELECTRO-LUMINESCENCE FROM ZNS-MN AND ZNS-TBF3 THIN-FILMS PREPARED BY RF SPUTTERING [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (10) : 2115 - 2117

[7] Suntola T., 1981, 1981 SID International Symposium. Digest of Papers. Vol.XII, P20

[8] TANIGUCHI K, 1985, P SOC INFORMATION DI, V26, P237

[9] A STUDY OF THE LUMINESCENT AND ELECTRICAL CHARACTERISTICS OF FILMS OF ZNS DOPED WITH MN [J]. JOURNAL OF LUMINESCENCE, 1983, 28 (02) : 147 - 162

[10] THE ORGANO-METALLIC CHEMICAL VAPOR-DEPOSITION OF ZNS AND ZNSE AT ATMOSPHERIC-PRESSURE [J]. JOURNAL OF CRYSTAL GROWTH, 1982, 59 (1-2) : 148 - 154