THE ORGANO-METALLIC CHEMICAL VAPOR-DEPOSITION OF ZNS AND ZNSE AT ATMOSPHERIC-PRESSURE

[1] DEVICE QUALITY EPITAXIAL GALLIUM-ARSENIDE GROWN BY METAL ALKYL-HYDRIDE TECHNIQUE [J]. JOURNAL OF CRYSTAL GROWTH, 1975, 31 (DEC) : 172 - 178

[2] BASS SJ, 1977, I PHYSICS C SERIES B, V33, P1

[3] BLANCONNIER P, 1978, THIN SOLID FILMS, V55, P375, DOI 10.1016/0040-6090(78)90154-2

[4] ORGANOMETALLIC GROWTH OF II-VI-COMPOUNDS [J]. JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) : 92 - 106

[5] ORGANOMETALLIC VAPOR-DEPOSITION OF EPITAXIAL ZNSE FILMS ON GAAS SUBSTRATES [J]. APPLIED PHYSICS LETTERS, 1978, 33 (07) : 656 - 658

[6] PHOTO-LUMINESCENCE AND HETEROJUNCTION PROPERTIES OF ZNSXSE1-X EPITAXIAL LAYERS ON GAAS AND GE GROWN BY ORGANOMETALLIC CVD [J]. JOURNAL OF ELECTRONIC MATERIALS, 1981, 10 (01) : 95 - 109

[7] MANGANESE DOPING OF ZNS AND ZNSE EPITAXIAL LAYERS GROWN BY ORGANO-METALLIC CHEMICAL VAPOR-DEPOSITION [J]. JOURNAL OF CRYSTAL GROWTH, 1982, 59 (1-2) : 155 - 160

[1] DEVICE QUALITY EPITAXIAL GALLIUM-ARSENIDE GROWN BY METAL ALKYL-HYDRIDE TECHNIQUE [J]. JOURNAL OF CRYSTAL GROWTH, 1975, 31 (DEC) : 172 - 178

[2] BASS SJ, 1977, I PHYSICS C SERIES B, V33, P1

[3] BLANCONNIER P, 1978, THIN SOLID FILMS, V55, P375, DOI 10.1016/0040-6090(78)90154-2

[4] ORGANOMETALLIC GROWTH OF II-VI-COMPOUNDS [J]. JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) : 92 - 106

[5] ORGANOMETALLIC VAPOR-DEPOSITION OF EPITAXIAL ZNSE FILMS ON GAAS SUBSTRATES [J]. APPLIED PHYSICS LETTERS, 1978, 33 (07) : 656 - 658

[6] PHOTO-LUMINESCENCE AND HETEROJUNCTION PROPERTIES OF ZNSXSE1-X EPITAXIAL LAYERS ON GAAS AND GE GROWN BY ORGANOMETALLIC CVD [J]. JOURNAL OF ELECTRONIC MATERIALS, 1981, 10 (01) : 95 - 109

[7] MANGANESE DOPING OF ZNS AND ZNSE EPITAXIAL LAYERS GROWN BY ORGANO-METALLIC CHEMICAL VAPOR-DEPOSITION [J]. JOURNAL OF CRYSTAL GROWTH, 1982, 59 (1-2) : 155 - 160