PHOTO-ASSISTED HOMOEPITAXIAL GROWTH OF ZNS BY MOLECULAR-BEAM EPITAXY

被引：29

作者：

KITAGAWA, M

TOMOMURA, Y

NAKANISHI, K

SUZUKI, A

NAKAJIMA, S

机构：

[1] Central Research Laboratories, Sharp Corporation, Tenri, Nara, 632

来源：

JOURNAL OF CRYSTAL GROWTH | 1990年 / 101卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(90)90935-E

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

A novel thin film growth technique, photo-assisted homoepitaxy of ZnS usingmolecular beam epitaxy (MBE), has been carried out with elemental zinc (Zn) and elemental sulphur (S) as source materials. The crystallinity of ZnS was greatly improved by irradiation with 350 nm monochromated ultraviolet light from a xenon lamp. The growth rate was about 0.6 μm/h at 260°C. The crystal quality was characterized by RHEED patterns, surface photographs and photoluminescence spectra. Finally, the irradiation intensity dependence and the growth mechanism were discussed. © 1989.

引用

页码：52 / 55

页数：4

共 27 条

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