PROPERTIES OF DOPED II-VI FILMS AND SUPERLATTICES GROWN BY PHOTOASSISTED MOLECULAR-BEAM EPITAXY

被引：17

作者：

GILES, NC

BICKNELL, RN

HARPER, RL

HWANG, S

HARRIS, KA

SCHETZINA, JF

机构：

[1] North Carolina State Univ, Raleigh,, NC, USA, North Carolina State Univ, Raleigh, NC, USA

来源：

JOURNAL OF CRYSTAL GROWTH | 1988年 / 86卷 / 1-4期

关键词：

PHOTOASSISTED MOLECULAR BEAM EPITAXY - SUPERLATTICES;

D O I：

10.1016/0022-0248(90)90741-3

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：348 / 353

页数：6

共 16 条

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[2] CONTROLLED SUBSTITUTIONAL DOPING OF CDTE-FILMS [J].

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[3] GROWTH OF HIGH MOBILITY N-TYPE CDTE BY PHOTOASSISTED MOLECULAR-BEAM EPITAXY [J].

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[4] PARA-TYPE CDTE EPILAYERS GROWN BY PHOTOASSISTED MOLECULAR-BEAM EPITAXY [J].

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GILES, NC ;

SCHETZINA, JF .

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[5]

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[6]

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[7]

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[8]

GILES NC, IN PRESS J VACUUM A

[9] PHOTOLUMINESCENCE OF DEFECT-EXCITON COMPLEXES IN 2-6 COMPOUNDS [J].

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PHYSICAL REVIEW LETTERS, 1965, 14 (03) :64-&

[10] EXPERIMENTAL PROOF OF THE EXISTENCE OF A NEW ELECTRONIC COMPLEX IN SILICON [J].

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