MOLECULAR-BEAM EPITAXIAL-GROWTH AND STRUCTURAL CHARACTERIZATION OF ZNS ON (001) GAAS

被引：15

作者：

BENZ, RG ^{[1
]}

HUANG, PC ^{[1
]}

STOCK, SR ^{[1
]}

SUMMERS, CJ ^{[1
]}

机构：

[1] GEORGIA INST TECHNOL,SCH MAT ENGN,ATLANTA,GA 30332

来源：

JOURNAL OF CRYSTAL GROWTH | 1988年 / 86卷 / 1-4期

关键词：

CRYSTALS - Epitaxial Growth - ELECTRONS - Diffraction - MOLECULAR BEAM EPITAXY;

D O I：

10.1016/0022-0248(90)90734-3

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The effect of surface nucleation processes on the quality of ZnS layers grown on (001) GaAs substrates by molecular beam epitaxy is reported. Reflection high energy electron diffraction indicated that nucleation at high temperatures produced more planar surfaces than nucleation at low temperatures, but the crystalline quality as assessed by X-ray double crystal diffractometry is relatively independent of nucleation temperature. A critical factor in layer quality was the initial roughness of the GaAs surfaces.

引用

页码：303 / 310

页数：8

共 21 条

[1] CHEMICAL ETCHING AND CLEANING PROCEDURES FOR SI, GE, AND SOME III-V COMPOUND SEMICONDUCTORS
ASPNES, DE
STUDNA, AA
[J]. APPLIED PHYSICS LETTERS, 1981, 39 (04) : 316 - 318
[2] STABILITY OF (100) GAAS-SURFACES IN AQUEOUS-SOLUTIONS
ASPNES, DE
STUDNA, AA
[J]. APPLIED PHYSICS LETTERS, 1985, 46 (11) : 1071 - 1073
[3] THE 1ST STEPS OF THE SULFURIZATION OF III-V COMPOUNDS
BARBOUTH, N
BERTHIER, Y
OUDAR, J
MOISON, JM
BENSOUSSAN, M
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (08) : 1663 - 1666
[4] Cho A. Y., 1975, Progress in Solid State Chemistry, V10, P157, DOI 10.1016/0079-6786(75)90005-9
[5] INFLUENCE OF GA-AS-TE INTERFACIAL PHASES ON THE ORIENTATION OF EPITAXIAL CDTE ON GAAS
FELDMAN, RD
AUSTIN, RF
KISKER, DW
JEFFERS, KS
BRIDENBAUGH, PM
[J]. APPLIED PHYSICS LETTERS, 1986, 48 (03) : 248 - 250
[6] GROWTH OF ZNS BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
FUJITA, S
TOMOMURA, Y
SASAKI, A
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (09): : L583 - L585
[7] Goryunova N. A., 1965, CHEM DIAMOND LIKE SE
[8] EPITAXIAL-GROWTH OF ZNS ON SI BY METAL ORGANIC-CHEMICAL VAPOR-DEPOSITION
HIRABAYASHI, K
KOGURE, O
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1985, 24 (12): : 1590 - 1593
[9] ANALYSIS OF REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION DATA FROM RECONSTRUCTED SEMICONDUCTOR SURFACES
JOYCE, BA
NEAVE, JH
DOBSON, PJ
LARSEN, PK
[J]. PHYSICAL REVIEW B, 1984, 29 (02): : 814 - 819
[10] EFFECTS OF H2S ADSORPTION ON SURFACE-PROPERTIES OF GAAS (100) GROWN INSITU BY MBE
MASSIES, J
DEZALY, F
LINH, NT
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (05): : 1134 - 1140

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