A COMPARISON OF SEMICONDUCTOR-DEVICES FOR HIGH-SPEED LOGIC

被引:137
作者
SOLOMON, PM
机构
关键词
D O I
10.1109/PROC.1982.12333
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:489 / 509
页数:21
相关论文
共 114 条
  • [1] ABE M, UNPUB IEEE T ELECTRO
  • [2] ABE M, 1982, IEEE T MICROWAVE JUL
  • [3] Asbeck P. M., 1981, International Electron Devices Meeting, P629
  • [4] CURRENT TRANSPORT IN NARROW-BASE TRANSISTORS
    BACCARANI, G
    JACOBONI, C
    MAZZONE, AM
    [J]. SOLID-STATE ELECTRONICS, 1977, 20 (01) : 5 - 10
  • [5] THE TRANSISTOR, A SEMI-CONDUCTOR TRIODE
    BARDEEN, J
    BRATTAIN, WH
    [J]. PHYSICAL REVIEW, 1948, 74 (02): : 230 - 231
  • [6] MERGED-TRANSISTOR LOGIC (MTL) - LOW-COST BIPOLAR LOGIC CONCEPT
    BERGER, HH
    WIEDMANN, SK
    [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1972, SC 7 (05) : 340 - &
  • [7] BOSCH BG, 1980, P I ELECTR ENG, V127, P254
  • [8] Bozler C. O., 1979, IEEE INT ELECTRON DE, P384
  • [9] Broers A. N., 1980, International Electron Devices Meeting. Technical Digest, P2
  • [10] Chatterjee P. K., 1980, IEEE Electron Device Letters, VEDL-1, P220, DOI 10.1109/EDL.1980.25295