A COMPARISON OF SEMICONDUCTOR-DEVICES FOR HIGH-SPEED LOGIC

[31] TEMPERATURE-DEPENDENT THRESHOLD BEHAVIOR OF DEPLETION MODE MOSFETS [J]. SOLID-STATE ELECTRONICS, 1979, 22 (04) : 423 - 430

[32] PERFORMANCE LIMITATIONS OF SILICON BIPOLAR-TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) : 415 - 421

[33] THE JOSEPHSON-TECHNOLOGY [J]. PROCEEDINGS OF THE IEEE, 1982, 70 (01) : 26 - 34

[34] GHEEWALA TR, COMMUNICATION

[35] SEMICONDUCTOR ANALYSIS USING FINITE-ELEMENTS .1. COMPUTATIONAL ASPECTS [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1981, 25 (04) : 232 - 245

[36] Hanaoka N., 1981, International Electron Devices Meeting, P512

[37] HARRIS RE, 1978, AIP C P, V44, P448

[38] DEVICE DOWN SCALING AND EXPECTED CIRCUIT PERFORMANCE [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) : 421 - 429

[39] TUNNELING HOT-ELECTRON TRANSFER AMPLIFIERS (THETA) - AMPLIFIERS OPERATING UP TO THE INFRARED [J]. SOLID-STATE ELECTRONICS, 1981, 24 (04) : 343 - 366

[40] HELLER WR, 1977, 14TH P IEEE DES AUT, P32

[31] TEMPERATURE-DEPENDENT THRESHOLD BEHAVIOR OF DEPLETION MODE MOSFETS [J]. SOLID-STATE ELECTRONICS, 1979, 22 (04) : 423 - 430

[32] PERFORMANCE LIMITATIONS OF SILICON BIPOLAR-TRANSISTORS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) : 415 - 421

[33] THE JOSEPHSON-TECHNOLOGY [J]. PROCEEDINGS OF THE IEEE, 1982, 70 (01) : 26 - 34

[34] GHEEWALA TR, COMMUNICATION

[35] SEMICONDUCTOR ANALYSIS USING FINITE-ELEMENTS .1. COMPUTATIONAL ASPECTS [J]. IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1981, 25 (04) : 232 - 245

[36] Hanaoka N., 1981, International Electron Devices Meeting, P512

[37] HARRIS RE, 1978, AIP C P, V44, P448

[38] DEVICE DOWN SCALING AND EXPECTED CIRCUIT PERFORMANCE [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) : 421 - 429

[39] TUNNELING HOT-ELECTRON TRANSFER AMPLIFIERS (THETA) - AMPLIFIERS OPERATING UP TO THE INFRARED [J]. SOLID-STATE ELECTRONICS, 1981, 24 (04) : 343 - 366

[40] HELLER WR, 1977, 14TH P IEEE DES AUT, P32