EPITAXIAL GROWTH OF VO SINGLE CRYSTALS AND THEIR ELECTRICAL PROPERTIES

被引:4
作者
TAKEI, H
KOIDE, S
机构
关键词
D O I
10.1143/JPSJ.24.1394
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:1394 / +
页数:1
相关论文
共 4 条
[1]   EPITAXIAL GROWTH OF VO2 SINGLE CRYSTALS AND THEIR ANISOTROPIC PROPERTIES IN ELECTRICAL RESISTIVITIES [J].
KOIDE, S ;
TAKEI, H .
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1967, 22 (03) :946-&
[2]   OXIDES WHICH SHOW A METAL-TO-INSULATOR TRANSITION AT THE NEEL TEMPERATURE [J].
MORIN, FJ .
PHYSICAL REVIEW LETTERS, 1959, 3 (01) :34-36
[3]  
SAKATA T, 1964, EPITOME SPRING M PHY, V5, P179
[4]   GROWTH AND ELECTRICAL PROPERTIES OF VANADIUM-OXIDE SINGLE CRYSTALS BY OXYCHROLIDE DECOMPOSITION METHOD [J].
TAKEI, H ;
KOIDE, S .
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1966, 21 (05) :1010-&