INSITU X-RAY PHOTOELECTRON SPECTROSCOPIC STUDY OF GAAS GROWN BY ATOMIC LAYER EPITAXY

[1] ATOMIC LAYER EPITAXY OF III-V BINARY COMPOUNDS [J]. APPLIED PHYSICS LETTERS, 1985, 47 (01) : 51 - 53

[2] GAAS/ALGAAS QUANTUM-WELL LASERS WITH ACTIVE REGIONS GROWN BY ATOMIC LAYER EPITAXY [J]. APPLIED PHYSICS LETTERS, 1987, 51 (19) : 1530 - 1532

[3] DOI A, 1986, APPL PHYS LETT, V49, P785, DOI 10.1063/1.97546

[4] MOLECULAR LAYER EPITAXY [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (05) : 1197 - 1200

[5] MECHANISM OF SURFACE-REACTION IN GAAS LAYER GROWTH [J]. SURFACE SCIENCE, 1987, 185 (1-2) : 249 - 268

[6] NEW APPROACH TO THE ATOMIC LAYER EPITAXY OF GAAS USING A FAST GAS-STREAM [J]. APPLIED PHYSICS LETTERS, 1988, 53 (16) : 1509 - 1511

[7] Pauling L., 1960, NATURE CHEM BOND

[8] SUNTOLA T, 1984, 16TH C SOL STAT DEV, P647

[9] GAAS ATOMIC LAYER EPITAXY BY HYDRIDE VPE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (03): : L212 - L214

[1] ATOMIC LAYER EPITAXY OF III-V BINARY COMPOUNDS [J]. APPLIED PHYSICS LETTERS, 1985, 47 (01) : 51 - 53

[2] GAAS/ALGAAS QUANTUM-WELL LASERS WITH ACTIVE REGIONS GROWN BY ATOMIC LAYER EPITAXY [J]. APPLIED PHYSICS LETTERS, 1987, 51 (19) : 1530 - 1532

[3] DOI A, 1986, APPL PHYS LETT, V49, P785, DOI 10.1063/1.97546

[4] MOLECULAR LAYER EPITAXY [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (05) : 1197 - 1200

[5] MECHANISM OF SURFACE-REACTION IN GAAS LAYER GROWTH [J]. SURFACE SCIENCE, 1987, 185 (1-2) : 249 - 268

[6] NEW APPROACH TO THE ATOMIC LAYER EPITAXY OF GAAS USING A FAST GAS-STREAM [J]. APPLIED PHYSICS LETTERS, 1988, 53 (16) : 1509 - 1511

[7] Pauling L., 1960, NATURE CHEM BOND

[8] SUNTOLA T, 1984, 16TH C SOL STAT DEV, P647

[9] GAAS ATOMIC LAYER EPITAXY BY HYDRIDE VPE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (03): : L212 - L214