HETEROEPITAXIAL GROWTH AND THE EFFECT OF STRAIN ON THE LUMINESCENT PROPERTIES OF GAN FILMS ON (1120) AND (0001) SAPPHIRE SUBSTRATES

被引：154

作者：

AMANO, H

HIRAMATSU, K

AKASAKI, I

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1988年 / 27卷 / 08期

关键词：

D O I：

10.1143/JJAP.27.L1384

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L1384 / L1386

页数：3

共 12 条

[1]

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[7] VARIATION OF LATTICE-PARAMETERS IN GAN WITH STOICHIOMETRY AND DOPING [J].

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[9]

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[10]

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