DOPING EFFECTS ON INTERSUBBAND ABSORPTION IN INGAAS/INALAS MULTIQUANTUM WELLS

被引：16

作者：

ASAI, H

KAWAMURA, Y

机构：

[1] NTT Opto-electronics Laboratories, Atsugi, Kanagawa 243-01

来源：

APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 15期

关键词：

D O I：

10.1063/1.102488

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Doping dependence of intersubband absorption in In0.53 Ga 0.47 As/In0.52 Al0.48 As multiquantum wells (MQWs) grown by molecular beam epitaxy is investigated. The MQWs having a constant well width of 130 Å are uniformly doped to a sheet carrier concentration of 4×1011-1×101 3 cm-2. Above Ns =1.8×10 12 cm-2, the intersubband absorption from the second to the third subband is observed, as well as from the first to the second, which agrees well with theoretical calculations.

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页码：1427 / 1429

页数：3

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