NOVEL SUB-100-NM THIN-FILM TRANSISTORS

被引：11

作者：

FRANSSILA, S

PALOHEIMO, J

KUIVALAINEN, P

机构：

[1] Technical Research Centre of Finland, Semiconductor Laboratory, SF-02200 Espoo

来源：

ELECTRONICS LETTERS | 1993年 / 29卷 / 08期

关键词：

SEMICONDUCTOR DEVICES AND MATERIALS; FIELD-EFFECT TRANSISTORS;

D O I：

10.1049/el:19930477

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new method is introduced for fabricating metal electrodes for thin film field-effect transistors having a source to drain distance in the sub-100 nm range. The method is based on a liftoff process with sidewall spacers and it is demonstrated by fabricating sub-100 nm polymer transistors. These are to the authors' knowledge the smallest polymer transistors reported.

引用

页码：713 / 714

页数：2

共 4 条

[1] 20-NM LINEWIDTH PLATINUM PATTERN FABRICATION USING CONFORMAL EFFUSIVE-SOURCE MOLECULAR PRECURSOR DEPOSITION AND SIDEWALL LITHOGRAPHY [J].