ATOMIC-FORCE MICROSCOPE STUDY OF GROWTH-KINETICS - SCALING IN THE HETEROEPITAXY OF CUCL ON CAF2(111)

被引:73
作者
TONG, WM
WILLIAMS, RS
YANASE, A
SEGAWA, Y
ANDERSON, MS
机构
[1] RIKEN,PHOTODYNAM RES CTR,AOBA KU,SENDAI 98932,JAPAN
[2] JET PROP LAB,SPACE MAT SCI & TECHNOL SECT,PASADENA,CA 91109
关键词
D O I
10.1103/PhysRevLett.72.3374
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We used the molecular beam epitaxial growth of CuCl on CaF2(111) to determine if scaling theory provides insight into the kinetic mechanisms of heteroepitaxy. We measured quantitative surface topographs of several films representing the island nucleation, growth, and coalescence regimes of film growth with an atomic force microscope, and found that the static scaling exponent of all the surfaces was alpha = 0.84 +/- 0.05. This alpha value is closer to theoretical predictions in which surface diffusion is the dominant smoothening mechanism than to those involving evaporation and recondensation.
引用
收藏
页码:3374 / 3377
页数:4
相关论文
共 21 条
[1]   NUMERICAL-SOLUTION OF A CONTINUUM EQUATION FOR INTERFACE GROWTH IN 2+1 DIMENSIONS [J].
AMAR, JG ;
FAMILY, F .
PHYSICAL REVIEW A, 1990, 41 (06) :3399-3402
[2]   STRUCTURE AND GROWTH OF CRYSTALLINE SUPERLATTICES - FROM MONOLAYER TO SUPERLATTICE [J].
BAUER, E ;
VANDERMERWE, JH .
PHYSICAL REVIEW B, 1986, 33 (06) :3657-3671
[3]  
Bauer E., 1958, Z KRISTALLOGR, V110, P372, DOI DOI 10.1524/ZKRI.1958.110.1-6.372
[4]   SUBMICRON-SCALE SURFACE ROUGHENING INDUCED BY ION-BOMBARDMENT [J].
EKLUND, EA ;
BRUINSMA, R ;
RUDNICK, J ;
WILLIAMS, RS .
PHYSICAL REVIEW LETTERS, 1991, 67 (13) :1759-1762
[5]   SCALING OF THE ACTIVE ZONE IN THE EDEN PROCESS ON PERCOLATION NETWORKS AND THE BALLISTIC DEPOSITION MODEL [J].
FAMILY, F ;
VICSEK, T .
JOURNAL OF PHYSICS A-MATHEMATICAL AND GENERAL, 1985, 18 (02) :L75-L81
[6]   ONE-DIMENSIONAL DISLOCATIONS .1. STATIC THEORY [J].
FRANK, FC ;
VANDERMERWE, JH .
PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1949, 198 (1053) :205-216
[7]   SOME THEOREMS ON THE FREE ENERGIES OF CRYSTAL SURFACES [J].
HERRING, C .
PHYSICAL REVIEW, 1951, 82 (01) :87-93
[8]   EFFECT OF CHANGE OF SCALE ON SINTERING PHENOMENA [J].
HERRING, C .
JOURNAL OF APPLIED PHYSICS, 1950, 21 (04) :301-303
[9]   DYNAMIC SCALING OF GROWING INTERFACES [J].
KARDAR, M ;
PARISI, G ;
ZHANG, YC .
PHYSICAL REVIEW LETTERS, 1986, 56 (09) :889-892
[10]  
KERN R, 1980, CURRENT TOPICS MATER, V3, pCH3