SUBMICRON-SCALE SURFACE ROUGHENING INDUCED BY ION-BOMBARDMENT

被引：240

作者：

EKLUND, EA ^{[1
]}

BRUINSMA, R ^{[1
]}

RUDNICK, J ^{[1
]}

WILLIAMS, RS ^{[1
]}

机构：

[1] UNIV CALIF LOS ANGELES,DEPT CHEM & BIOCHEM,LOS ANGELES,CA 90024

来源：

PHYSICAL REVIEW LETTERS | 1991年 / 67卷 / 13期

关键词：

D O I：

10.1103/PhysRevLett.67.1759

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The scanning tunneling microscope (STM) was used to quantitatively investigate nonequilibrium surfaces of graphite roughened by sputter etching with 5-keV Ar ions. The resulting surface morphology depended strongly on the ion flux and fluence, as well as the sample temperature. The height-correlation functions of the roughened surfaces were calculated directly from the STM topographs and compared to linear-response theory and scaling analyses for the propagation of growing fronts. The surfaces developed correlated structures characterized by a length that diverged with increasing ion fluence.

引用

页码：1759 / 1762

页数：4

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