EFFECT OF COPPER IONS IN THE SLURRY ON THE CHEMICAL-MECHANICAL POLISH RATE OF TITANIUM

被引：38

作者：

STEIGERWALD, JM

MURARKA, SP

GUTMANN, RJ

DUQUETTE, DJ

机构：

[1] Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1994年 / 141卷 / 12期

关键词：

Adhesion promoter - Chemical mechanical polishing - Diffusion barrier - Metallization;

D O I：

10.1149/1.2059362

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Titanium is being investigated as the adhesion promoter and diffusion barrier between silicon dioxide and copper in a copper metallization scheme. Chemical-mechanical polishing (CMP) is being used to define the inlaid copper interconnections. An investigation into the CMP of titanium has revealed an interaction between the presence of copper ions in the polish slurry and the polish rate of titanium. The polish rate of titanium increases dramatically when copper ions are present in the slurry from the previous copper polish step. In this paper, we present and discuss the results of these investigations.

引用

页码：3512 / 3516

页数：5

共 11 条

[1]

BROWN NJ, 1981, P SOC PHOTO-OPT INST, V306, P42

[2] ON POTENTIAL/PH DIAGRAMS OF CU-NH3-H2O AND ZN--NH3-H2O SYSTEMS [J].