COHERENCE KONDO GAP IN CENISN AND CERHSB

被引:43
作者
TAKABATAKE, T
NAKAMOTO, G
TANAKA, H
BANDO, Y
FUJII, H
NISHIGORI, S
GOSHIMA, H
SUZUKI, T
FUJITA, T
OGURO, I
HIRAOKA, T
MALIK, SK
机构
[1] HIROSHIMA UNIV,FAC SCI,HIROSHIMA 724,JAPAN
[2] UNIV TOKYO,INST SOLID STATE PHYS,TOKYO 106,JAPAN
[3] SAGA UNIV,FAC SCI & ENGN,SAGA 840,JAPAN
[4] TATA INST FUNDAMENTAL RES,BOMBAY 400005,INDIA
来源
PHYSICA B | 1994年 / 199卷
关键词
D O I
10.1016/0921-4526(94)91868-6
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
CeNiSn and CeRhSb are Kondo-lattice compounds showing the behavior of a small-gap semiconductor at temperatures below 7 K. We review and discuss the magnetic, transport and specific-heat measurements performed on single crystals of CeNiSn and polycrystals of CeRhSb. Prerequisites for gap formation are deduced from the effects of substitution and application of a magnetic field and pressure on the gapped state.
引用
收藏
页码:457 / 462
页数:6
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