HG1-XCDXTE BASED QUANTUM WELLS FOR THE 3-MUM WAVELENGTH REGION

被引：19

作者：

FELDMAN, RD ^{[1
]}

CESAR, CL ^{[1
]}

ISLAM, MN ^{[1
]}

AUSTIN, RF ^{[1
]}

DIGIOVANNI, AE ^{[1
]}

SHAH, J ^{[1
]}

SPITZER, R ^{[1
]}

ORENSTEIN, J ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1989年 / 7卷 / 02期

关键词：

D O I：

10.1116/1.576198

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：431 / 434

页数：4

共 19 条

[1] LAYER INTERMIXING IN HGTE-CDTE SUPERLATTICES
ARCH, DK
STAUDENMANN, JL
FAURIE, JP
[J]. APPLIED PHYSICS LETTERS, 1986, 48 (23) : 1588 - 1590
[2] ELECTRONIC STATES IN SEMICONDUCTOR HETEROSTRUCTURES
BASTARD, G
BRUM, JA
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1986, 22 (09) : 1625 - 1644
[3] HGTE-CDTE SUPERLATTICES - MAGNETOOPTICS AND BAND-STRUCTURE
BERROIR, JM
GULDNER, Y
VOOS, M
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1986, 22 (09) : 1793 - 1798
[4] CESAR CL, IN PRESS APPL PHYS L
[5] ELECTRICAL DETERMINATION OF THE VALENCE-BAND DISCONTINUITY IN HGTE-CDTE HETEROJUNCTIONS
CHOW, DH
MCCALDIN, JO
BONNEFOI, AR
MCGILL, TC
SOU, IK
FAURIE, JP
[J]. APPLIED PHYSICS LETTERS, 1987, 51 (26) : 2230 - 2232
[6] SURFACE-STRUCTURE OF GAAS WITH ADSORBED TE
FELDMAN, RD
AUSTIN, RF
[J]. APPLIED PHYSICS LETTERS, 1986, 49 (15) : 954 - 956
[7] DEFECTS IN (111) HGTE GROWN BY MOLECULAR-BEAM EPITAXY
FELDMAN, RD
NAKAHARA, S
AUSTIN, RF
BOONE, T
OPILA, RL
WYNN, AS
[J]. APPLIED PHYSICS LETTERS, 1987, 51 (16) : 1239 - 1241
[8] VERY HIGH MOBILITY HGTE FILMS GROWN ON GAAS SUBSTRATES BY MOLECULAR-BEAM EPITAXY
FELDMAN, RD
ORON, M
AUSTIN, RF
OPILA, RL
[J]. JOURNAL OF APPLIED PHYSICS, 1988, 63 (08) : 2872 - 2874
[9] FELDMAN RD, UNPUB
[10] ELECTRICAL MEASUREMENTS OF MOLECULAR-BEAM EPITAXY HGTE-CDTE SUPERLATTICES AND ABSORPTION-COEFFICIENT ANALYSIS OF MOLECULAR-BEAM EPITAXY HGTE
GOODWIN, MW
KINCH, MA
KOESTNER, RJ
CHEN, MC
SEILER, DG
JUSTICE, RJ
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (05): : 3110 - 3114

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