ANOMALOUS HIGH PHOTOCURRENTS OBSERVED IN P-TYPE SILICON ELECTRODES HAVING HIGH ELECTRIC RESISTIVITIES

被引：1

作者：

DOUSHITA, H ^{[1
]}

MATSUMURA, M ^{[1
]}

TSUBOMURA, H ^{[1
]}

机构：

[1] OSAKA UNIV,FAC ENGN SCI,DEPT CHEM,TOYONAKA,OSAKA 560,JAPAN

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1989年 / 136卷 / 01期

关键词：

D O I：

10.1149/1.2096619

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：84 / 87

页数：4

共 8 条

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[5] HYDROGEN EVOLUTION AND IODINE REDUCTION ON AN ILLUMINATED N-P JUNCTION SILICON ELECTRODE AND ITS APPLICATION TO EFFICIENT SOLAR PHOTOELECTROLYSIS OF HYDROGEN IODIDE [J].

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[6]

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[7]

SZE SM, 1981, PHYS SEMICONDUCTOR D, pCH13

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SZKLARCZYK M, 1984, J PHYS CHEM-US, V88, P1805

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