PHOTOANODIC PROPERTIES OF AN NORMAL-TYPE SILICON ELECTRODE IN AQUEOUS-SOLUTIONS CONTAINING FLUORIDES

被引：50

作者：

MATSUMURA, M ^{[1
]}

MORRISON, SR ^{[1
]}

机构：

[1] SRI INT,MENLO PK,CA 94025

来源：

JOURNAL OF ELECTROANALYTICAL CHEMISTRY | 1983年 / 144卷 / 1-2期

关键词：

D O I：

10.1016/S0022-0728(83)80149-1

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

引用

页码：113 / 120

页数：8

共 12 条

[1]

BARD AJ, 1977, J ELECTROCHEM SOC, V124, P1760

[2] INVESTIGATION OF CHEMICAL PROPERTIES OF STAIN FILMS ON SILICON BY MEANS OF INFRARED SPECTROSCOPY [J].

BECKMANN, KH .

SURFACE SCIENCE, 1965, 3 (04) :314-&

[3] USE OF CHEMICALLY DERIVATIZED N-TYPE SILICON PHOTOELECTRODES IN AQUEOUS-MEDIA - PHOTO-OXIDATION OF IODIDE, HEXACYANOIRON(II), AND HEXAAMMINERUTHENIUM(II) AT FERROCENE-DERIVATIZED PHOTOANODES [J].

BOCARSLY, AB ;

WALTON, EG ;

WRIGHTON, MS .

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1980, 102 (10) :3390-3398

[4] PHYSICAL THEORY OF SEMICONDUCTOR SURFACES [J].

GARRETT, CGB ;

BRATTAIN, WH .

PHYSICAL REVIEW, 1955, 99 (02) :376-387

[5]

GERISCHER H, 1960, Z PHYS CHEM, V24, P376

[6] THE INFLUENCE OF SURFACE OXIDE-FILMS ON THE STABILIZATION OF N-SI PHOTOELECTRODE [J].

LOO, BH ;

FRESE, KW ;

MORRISON, SR .

SURFACE SCIENCE, 1981, 109 (01) :75-81

[7] PHOTOELECTROCHEMICAL CORROSION AS INFLUENCED BY AN OXIDE LAYER [J].

MADOU, MJ ;

FRESE, KW ;

MORRISON, SR .

JOURNAL OF PHYSICAL CHEMISTRY, 1980, 84 (25) :3423-3428

[8] ANODIC DISSOLUTION OF SILICON IN HYDROFLUORIC ACID SOLUTIONS [J].

MEMMING, R ;

SCHWANDT, G .

SURFACE SCIENCE, 1966, 4 (02) :109-&

[9]

MORRISON SR, 1981, ELECTROCHEMISTRY SEM, pCH6

[10] PHOTO-VOLTAGE AND STABILITY OF AN N-TYPE SILICON SEMICONDUCTOR COATED WITH METAL OR METAL-FREE PHTHALOCYANINE THIN-FILMS IN AQUEOUS REDOX SOLUTIONS [J].

NAKATO, Y ;

SHIOJI, M ;

TSUBOMURA, H .

JOURNAL OF PHYSICAL CHEMISTRY, 1981, 85 (12) :1670-1672

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