THE INFLUENCE OF SURFACE OXIDE-FILMS ON THE STABILIZATION OF N-SI PHOTOELECTRODE

被引：16

作者：

LOO, BH

FRESE, KW

MORRISON, SR

机构：

来源：

SURFACE SCIENCE | 1981年 / 109卷 / 01期

关键词：

D O I：

10.1016/0039-6028(81)90512-4

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：75 / 81

页数：7

共 13 条

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FRESE, KW ;

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[6]

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[8]

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[9]

Latimer W.M., 1953, OXIDATION POTENTIALS

[10] BULK AND SURFACE CHARACTERIZATION OF THE SILICON ELECTRODE [J].

MADOU, MJ ;

LOO, BH ;

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SURFACE SCIENCE, 1981, 108 (01) :135-152

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