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THE GROWTH AND CHARACTERIZATION OF VERY THIN SILICON DIOXIDE FILMS
被引:72
作者
:
ADAMS, AC
论文数:
0
引用数:
0
h-index:
0
ADAMS, AC
SMITH, TE
论文数:
0
引用数:
0
h-index:
0
SMITH, TE
CHANG, CC
论文数:
0
引用数:
0
h-index:
0
CHANG, CC
机构
:
来源
:
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
|
1980年
/ 127卷
/ 08期
关键词
:
D O I
:
10.1149/1.2130002
中图分类号
:
O646 [电化学、电解、磁化学];
学科分类号
:
081704 ;
摘要
:
引用
收藏
页码:1787 / 1794
页数:8
相关论文
共 52 条
[1]
FORMATION OF 20-25A THERMAL OXIDE FILMS ON SILICON AT 950 DEGREES-1140 DEGREES C
ABOAF, JA
论文数:
0
引用数:
0
h-index:
0
ABOAF, JA
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1971,
118
(08)
: 1370
-
&
[2]
CHEMICAL-DEPOSITION OF BORON-NITROGEN FILMS
ADAMS, AC
论文数:
0
引用数:
0
h-index:
0
ADAMS, AC
CAPIO, CD
论文数:
0
引用数:
0
h-index:
0
CAPIO, CD
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1980,
127
(02)
: 399
-
405
[3]
DEPOSITION OF SILICON DIOXIDE FILMS AT REDUCED PRESSURE
ADAMS, AC
论文数:
0
引用数:
0
h-index:
0
机构:
Bell Laboratories, Murray Hill
ADAMS, AC
CAPIO, CD
论文数:
0
引用数:
0
h-index:
0
机构:
Bell Laboratories, Murray Hill
CAPIO, CD
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1979,
126
(06)
: 1042
-
1046
[4]
DETERMINATION OF PROPERTIES OF FILMS ON SILICON BY METHOD OF ELLIPSOMETRY
ARCHER, RJ
论文数:
0
引用数:
0
h-index:
0
ARCHER, RJ
[J].
JOURNAL OF THE OPTICAL SOCIETY OF AMERICA,
1962,
52
(09)
: 970
-
&
[5]
OPTICAL MEASUREMENT OF FILM GROWTH ON SILICON AND GERMANIUM SURFACES IN ROOM AIR
ARCHER, RJ
论文数:
0
引用数:
0
h-index:
0
ARCHER, RJ
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1957,
104
(10)
: 619
-
622
[6]
OPTICAL-PROPERTIES OF THE INTERFACE BETWEEN SI AND ITS THERMALLY GROWN OXIDE
ASPNES, DE
论文数:
0
引用数:
0
h-index:
0
机构:
LAB ELECTR & PHYS,F-94450 LIMEIL BREVANNES,FRANCE
LAB ELECTR & PHYS,F-94450 LIMEIL BREVANNES,FRANCE
ASPNES, DE
THEETEN, JB
论文数:
0
引用数:
0
h-index:
0
机构:
LAB ELECTR & PHYS,F-94450 LIMEIL BREVANNES,FRANCE
LAB ELECTR & PHYS,F-94450 LIMEIL BREVANNES,FRANCE
THEETEN, JB
[J].
PHYSICAL REVIEW LETTERS,
1979,
43
(14)
: 1046
-
1050
[7]
HYDRIDES AND HYDROXYLS IN THIN SILICON DIOXIDE FILMS
BECKMANN, KH
论文数:
0
引用数:
0
h-index:
0
BECKMANN, KH
HARRICK, NJ
论文数:
0
引用数:
0
h-index:
0
HARRICK, NJ
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1971,
118
(04)
: 614
-
&
[8]
BURKHARDT PJ, 1966, T METALL SOC AIME, V236, P299
[9]
THEORY OF THE OXIDATION OF METALS
CABRERA, N
论文数:
0
引用数:
0
h-index:
0
CABRERA, N
MOTT, NF
论文数:
0
引用数:
0
h-index:
0
MOTT, NF
[J].
REPORTS ON PROGRESS IN PHYSICS,
1948,
12
: 163
-
184
[10]
OXIDE THICKNESS MEASUREMENTS UP TO 120 A ON SILICON AND ALUMINUM USING CHEMICALLY SHIFTED AUGER-SPECTRA
CHANG, CC
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
CHANG, CC
BOULIN, DM
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BOULIN, DM
[J].
SURFACE SCIENCE,
1977,
69
(02)
: 385
-
402
←
1
2
3
4
5
6
→
共 52 条
[1]
FORMATION OF 20-25A THERMAL OXIDE FILMS ON SILICON AT 950 DEGREES-1140 DEGREES C
ABOAF, JA
论文数:
0
引用数:
0
h-index:
0
ABOAF, JA
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1971,
118
(08)
: 1370
-
&
[2]
CHEMICAL-DEPOSITION OF BORON-NITROGEN FILMS
ADAMS, AC
论文数:
0
引用数:
0
h-index:
0
ADAMS, AC
CAPIO, CD
论文数:
0
引用数:
0
h-index:
0
CAPIO, CD
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1980,
127
(02)
: 399
-
405
[3]
DEPOSITION OF SILICON DIOXIDE FILMS AT REDUCED PRESSURE
ADAMS, AC
论文数:
0
引用数:
0
h-index:
0
机构:
Bell Laboratories, Murray Hill
ADAMS, AC
CAPIO, CD
论文数:
0
引用数:
0
h-index:
0
机构:
Bell Laboratories, Murray Hill
CAPIO, CD
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1979,
126
(06)
: 1042
-
1046
[4]
DETERMINATION OF PROPERTIES OF FILMS ON SILICON BY METHOD OF ELLIPSOMETRY
ARCHER, RJ
论文数:
0
引用数:
0
h-index:
0
ARCHER, RJ
[J].
JOURNAL OF THE OPTICAL SOCIETY OF AMERICA,
1962,
52
(09)
: 970
-
&
[5]
OPTICAL MEASUREMENT OF FILM GROWTH ON SILICON AND GERMANIUM SURFACES IN ROOM AIR
ARCHER, RJ
论文数:
0
引用数:
0
h-index:
0
ARCHER, RJ
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1957,
104
(10)
: 619
-
622
[6]
OPTICAL-PROPERTIES OF THE INTERFACE BETWEEN SI AND ITS THERMALLY GROWN OXIDE
ASPNES, DE
论文数:
0
引用数:
0
h-index:
0
机构:
LAB ELECTR & PHYS,F-94450 LIMEIL BREVANNES,FRANCE
LAB ELECTR & PHYS,F-94450 LIMEIL BREVANNES,FRANCE
ASPNES, DE
THEETEN, JB
论文数:
0
引用数:
0
h-index:
0
机构:
LAB ELECTR & PHYS,F-94450 LIMEIL BREVANNES,FRANCE
LAB ELECTR & PHYS,F-94450 LIMEIL BREVANNES,FRANCE
THEETEN, JB
[J].
PHYSICAL REVIEW LETTERS,
1979,
43
(14)
: 1046
-
1050
[7]
HYDRIDES AND HYDROXYLS IN THIN SILICON DIOXIDE FILMS
BECKMANN, KH
论文数:
0
引用数:
0
h-index:
0
BECKMANN, KH
HARRICK, NJ
论文数:
0
引用数:
0
h-index:
0
HARRICK, NJ
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1971,
118
(04)
: 614
-
&
[8]
BURKHARDT PJ, 1966, T METALL SOC AIME, V236, P299
[9]
THEORY OF THE OXIDATION OF METALS
CABRERA, N
论文数:
0
引用数:
0
h-index:
0
CABRERA, N
MOTT, NF
论文数:
0
引用数:
0
h-index:
0
MOTT, NF
[J].
REPORTS ON PROGRESS IN PHYSICS,
1948,
12
: 163
-
184
[10]
OXIDE THICKNESS MEASUREMENTS UP TO 120 A ON SILICON AND ALUMINUM USING CHEMICALLY SHIFTED AUGER-SPECTRA
CHANG, CC
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
CHANG, CC
BOULIN, DM
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BELL TEL LABS INC,MURRAY HILL,NJ 07974
BOULIN, DM
[J].
SURFACE SCIENCE,
1977,
69
(02)
: 385
-
402
←
1
2
3
4
5
6
→