OPTICAL-PROPERTIES OF THE INTERFACE BETWEEN SI AND ITS THERMALLY GROWN OXIDE

被引：107

作者：

ASPNES, DE ^{[1
]}

THEETEN, JB ^{[1
]}

机构：

[1] LAB ELECTR & PHYS,F-94450 LIMEIL BREVANNES,FRANCE

来源：

PHYSICAL REVIEW LETTERS | 1979年 / 43卷 / 14期

关键词：

D O I：

10.1103/PhysRevLett.43.1046

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The in situ optical properties of the interface between Si and its thermally grown oxide, deduced over the spectral region between the visible and the near-ultraviolet by analysis of spectroscopic ellipsometric data, are characteristic of a (7±2)- region of atomically mixed Si and O of average stoichiometry SiO0.4±0.2. The results are incompatible with either microroughness or an abrupt transition from Si to SiO2, but rather support a graded transition region. © 1979 The American Physical Society.

引用

页码：1046 / 1050

页数：5

共 18 条

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[4] ASPNES DE, UNPUBLISHED
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[7] USE OF THIN SI CRYSTALS IN BACKSCATTERING-CHANNELING STUDIES OF SI-SIO2 INTERFACE
FELDMAN, LC
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[J]. PHYSICAL REVIEW LETTERS, 1978, 41 (20) : 1396 - 1399
[8] GRUNTHANER FJ, 1978, PHYSICS SIO2 ITS INT, P389
[9] KEEPING ES, 1962, INTRO STATISTICAL IN, pCH12
[10] KRIVANEK OL, 1978, PHYSICS SIO2 ITS INT, P356

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