PHYSICAL AND CHEMICAL-ANALYSIS OF RF-SPUTTERED CU/TE/CDTE STRUCTURES

被引:6
作者
DEBBAGH, F [1 ]
MOHSSINE, H [1 ]
AMEZIANE, EL [1 ]
AZIZAN, M [1 ]
BRUNEL, M [1 ]
机构
[1] CNRS,CRISTALLOG LAB,F-38042 GRENOBLE,FRANCE
关键词
D O I
10.1016/0927-0248(93)90002-K
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
Physical and chemical properties of Cu/Te/CdTe structures are studied by means of both grazing incidence X-ray diffraction and XPS techniques. Structural analysis shows that an interfacial reaction occurs between Cu and Te layers leading to the formation of the stoichiometric Cu2Te compound. The contact resistivity has been analyzed on the basis of Mott's model and taking into account the disordered nature of the Cu/Te structure as well as the formed interfaces.
引用
收藏
页码:1 / 8
页数:8
相关论文
共 25 条
[1]  
Anthony T.C., 1982, J CRYST GROWTH, V59, P289
[2]   LOW RESISTANCE CONTACTS TO P-TYPE CADMIUM TELLURIDE [J].
ANTHONY, TC ;
FAHRENBRUCH, AL ;
BUBE, RH .
JOURNAL OF ELECTRONIC MATERIALS, 1982, 11 (01) :89-109
[3]  
Aven M., 1969, Ohmic contacts to semiconductors, P69
[4]  
BASOL BM, 1990, 21ST P IEEE PHOT SPE, P39
[5]  
BERNARD J, 1966, REV PHYS APPL, P165
[6]  
BLAMIERS NG, 1983, J APPL PHYS, V16
[7]  
BRUNEL M, 1988, ANALUSIS, V16, P279
[8]   SPECIFIC CONTACT RESISTANCE OF METAL-SEMICONDUCTOR BARRIERS [J].
CHANG, CY ;
FANG, YK ;
SZE, SM .
SOLID-STATE ELECTRONICS, 1971, 14 (07) :541-&
[9]  
CHIZHIKOV DM, 1970, LLKIM COLLETS
[10]  
CUSANO DA, 1966, REV PHYS APPL, P165