EPITAXIAL SILICON LAYERS GROWN ON ION-IMPLANTED SILICON-NITRIDE LAYERS

[1] BALARIN M, 1959, THIN SOLID FILMS, V4, P255

[2] BALKANSKI M, 1963, J PHYS SOC JAP S18, P37

[3] FORMATION OF SIC IN SILICON BY ION IMPLANTATION [J]. APPLIED PHYSICS LETTERS, 1971, 18 (11) : 509 - &

[4] BORDERS JA, 1971, 2 INT C ION IMPL SEM, P241

[5] BRICE DK, 1971, 710599 SAND LAB RES

[6] DEXTER RJ, 1969, THESIS VIRGINIA POLY

[7] EERNISSE EP, PRIVATE COMMUNICATIO

[8] Freeman J. H., 1970, European conference on ion implantation, P74

[9] LINDHARD J, 1963, K DAN VIDENSK SELSK, V33

[10] PAVLOV PV, 1967, SOV PHYS DOKL, V12, P11

[1] BALARIN M, 1959, THIN SOLID FILMS, V4, P255

[2] BALKANSKI M, 1963, J PHYS SOC JAP S18, P37

[3] FORMATION OF SIC IN SILICON BY ION IMPLANTATION [J]. APPLIED PHYSICS LETTERS, 1971, 18 (11) : 509 - &

[4] BORDERS JA, 1971, 2 INT C ION IMPL SEM, P241

[5] BRICE DK, 1971, 710599 SAND LAB RES

[6] DEXTER RJ, 1969, THESIS VIRGINIA POLY

[7] EERNISSE EP, PRIVATE COMMUNICATIO

[8] Freeman J. H., 1970, European conference on ion implantation, P74

[9] LINDHARD J, 1963, K DAN VIDENSK SELSK, V33

[10] PAVLOV PV, 1967, SOV PHYS DOKL, V12, P11