NEW TECHNIQUE FOR ELECTRON-TUNNELING JUNCTION FABRICATION AND ITS APPLICATION TO TANTALUM AND NIOBIUM

被引：46

作者：

KEITH, V ^{[1
]}

LESLIE, JD ^{[1
]}

机构：

[1] UNIV WATERLOO,DEPT PHYS,WATERLOO N2L 3G1,ONTARIO,CANADA

来源：

PHYSICAL REVIEW B | 1978年 / 18卷 / 09期

关键词：

D O I：

10.1103/PhysRevB.18.4739

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：4739 / 4761

页数：23

共 46 条

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[J]. PHYSICAL REVIEW LETTERS, 1960, 5 (04) : 147 - 148
[14] GIAVER I, 1963, 8TH P INT C LOW TEMP, P171
[15] Jacklevic R C, 1966, PHYS REV LETT, V17, P1139
[16] OBSERVATION OF ENERGY GAPS IN BETA-TUNGSTENS AND OTHER SUPERCONDUCTORS USING A SIMPLIFIED TUNNELING TECHNIQUE
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[J]. PHYSICS LETTERS, 1966, 20 (06): : 581 - &
[17] ANISOTROPIC ENERGY-GAP MEASUREMENTS ON SUPERCONDUCTING NIOBIUM SINGLE CRYSTALS BY TUNNELING
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ROSE, RM
[J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (03) : 1721 - &
[18] MACVICAR MLA, 1977, ANISOTROPY EFFECTS S
[19] Mayer J.W., 1970, ION IMPLANTATION SEM, P10
[20] TUNNELING MODEL OF SUPERCONDUCTING PROXIMITY EFFECT
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[J]. PHYSICAL REVIEW, 1968, 175 (02): : 537 - &