PHOTOLUMINESCENCE STUDIES OF PSEUDOMORPHIC MODULATION-DOPED ALGAAS/INGAAS/GAAS QUANTUM WELLS

被引：37

作者：

DODABALAPUR, A

KESAN, VP

HINSON, DR

NEIKIRK, DP

STREETMAN, BG

机构：

来源：

APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 17期

关键词：

D O I：

10.1063/1.101301

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1675 / 1677

页数：3

共 17 条

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[4]

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[5]

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[6]

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APPLIED PHYSICS LETTERS, 1985, 47 (09) :952-954

[8] NOVEL OPTOELECTRONIC SINGLE QUANTUM-WELL DEVICES BASED ON ELECTRON BLEACHING OF EXCITON ABSORPTION [J].

KASTALSKY, A ;

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LEHENY, RF .

APPLIED PHYSICS LETTERS, 1987, 50 (12) :708-710

[9] GROWTH AND RAPID THERMAL ANNEALING OF ALGAAS/INGAAS PSEUDOMORPHIC MODULATION-DOPED STRUCTURES [J].

KESAN, VP ;

DODABALAPUR, A ;

NEIKIRK, DP ;

STREETMAN, BG .

APPLIED PHYSICS LETTERS, 1988, 53 (08) :681-683

[10] BAND-GAP RENORMALIZATION IN SEMICONDUCTOR QUANTUM WELLS CONTAINING CARRIERS [J].

KLEINMAN, DA ;

MILLER, RC .

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