GROWTH AND RAPID THERMAL ANNEALING OF ALGAAS/INGAAS PSEUDOMORPHIC MODULATION-DOPED STRUCTURES

被引:7
作者
KESAN, VP
DODABALAPUR, A
NEIKIRK, DP
STREETMAN, BG
机构
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D O I
10.1063/1.99849
中图分类号
O59 [应用物理学];
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页码:681 / 683
页数:3
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共 24 条
[1]   VARIATION OF THE CRITICAL LAYER THICKNESS WITH IN CONTENT IN STRAINED INX GA1-XAS-GAAS QUANTUM-WELLS GROWN BY MOLECULAR-BEAM EPITAXY [J].
ANDERSSON, TG ;
CHEN, ZG ;
KULAKOVSKII, VD ;
UDDIN, A ;
VALLIN, JT .
APPLIED PHYSICS LETTERS, 1987, 51 (10) :752-754
[2]   CAPLESS RAPID THERMAL ANNEALING OF GAAS IMPLANTED WITH SI+ USING AN ENHANCED OVERPRESSURE PROXIMITY METHOD [J].
ARMIENTO, CA ;
LEHMAN, LL ;
PRINCE, FC ;
ZEMON, S .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (8A) :2010-2016
[3]   ION-IMPLANTATION AND ANNEALING OF UNDOPED (AL,GA)AS/GAAS HETEROSTRUCTURES [J].
BARATTE, H ;
JACKSON, TN ;
SOLOMON, PM ;
LATULIPE, DC ;
FRANK, DJ ;
MOORE, JS .
APPLIED PHYSICS LETTERS, 1987, 51 (18) :1459-1461
[4]  
BLOCK TR, 1986, J ELECTROCHEM SOC, V133, P442
[5]   SELF-ALIGNED MODULATION-DOPED (AL,GA)AS/GAAS FIELD-EFFECT TRANSISTORS [J].
CIRILLO, NC ;
ABROKWAH, JK ;
SHUR, MS .
IEEE ELECTRON DEVICE LETTERS, 1984, 5 (04) :129-131
[6]   PHOSPHORUS-OVERPRESSURE RAPID THERMAL ANNEALING OF INDIUM-PHOSPHIDE [J].
DODABALAPUR, A ;
FARLEY, CW ;
LESTER, SD ;
KIM, TS ;
STREETMAN, BG .
JOURNAL OF ELECTRONIC MATERIALS, 1987, 16 (04) :283-288
[7]   PHOTOCONDUCTIVITY EFFECTS IN EXTREMELY HIGH MOBILITY MODULATION-DOPED (AL,GA)AS/GAAS HETEROSTRUCTURES [J].
DRUMMOND, TJ ;
KOPP, W ;
FISCHER, R ;
MORKOC, H ;
THORNE, RE ;
CHO, AY .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (02) :1238-1240
[8]   REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION STUDIES OF PRINCIPAL STREAK INTENSITY PROFILES AND ADATOM COVERAGE OF (100) GAAS GROWN BY MOLECULAR-BEAM EPITAXY [J].
FARLEY, CW ;
STREETMAN, BG .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (02) :749-753
[9]   ON THE COLLAPSE OF DRAIN I-V-CHARACTERISTICS IN MODULATION-DOPED FETS AT CRYOGENIC TEMPERATURES [J].
FISCHER, R ;
DRUMMOND, TJ ;
KLEM, J ;
KOPP, W ;
HENDERSON, TS ;
PERRACHIONE, D ;
MORKOC, H .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (08) :1028-1032
[10]  
FISTUL VI, 1983, SOV PHYS SEMICOND+, V17, P695