SELF-ALIGNED MODULATION-DOPED (AL,GA)AS/GAAS FIELD-EFFECT TRANSISTORS

被引：16

作者：

CIRILLO, NC ^{[1
]}

ABROKWAH, JK ^{[1
]}

SHUR, MS ^{[1
]}

机构：

[1] UNIV MINNESOTA,DEPT ENGN,MINNEAPOLIS,MN 55455

来源：

IEEE ELECTRON DEVICE LETTERS | 1984年 / 5卷 / 04期

关键词：

D O I：

10.1109/EDL.1984.25857

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：129 / 131

页数：3

共 16 条

[1]

ABROKWAH JK, 1983, 5 P ANN MOL BEAM EP

[2]

ABROKWAH JK, UNPUB J VAC SCI TECH

[3]

[Anonymous], COMMUNICATION

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JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (04) :507-&

[5]

CROWDER BL, 1971, J VAC SCI TECHNOL, V8, P571

[6]

Drummond T. J., 1982, International Electron Devices Meeting. Technical Digest, P586

[7] HIGH-SPEED LOW-VOLTAGE RING OSCILLATORS BASED ON SELECTIVELY DOPED HETEROJUNCTION TRANSISTORS [J].

FEUER, MD ;

HENDEL, RH ;

KIEHL, RA ;

HWANG, JCM ;

KERAMIDAS, VG ;

ALLYN, CL ;

DINGLE, R .

IEEE ELECTRON DEVICE LETTERS, 1983, 4 (09) :306-307

[8] THE EFFECT OF ANNEALING ON THE ELECTRICAL-PROPERTIES OF SELECTIVELY DOPED GAAS/N-ALGAAS HETEROJUNCTION STRUCTURES GROWN BY MBE [J].

ISHIKAWA, T ;

HIYAMIZU, S ;

MIMURA, T ;

SAITO, J ;

HASHIMOTO, H .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (11) :L814-L816

[9]

Judaprawira S., 1981, IEEE Electron Device Letters, VEDL-2, P14, DOI 10.1109/EDL.1981.25322

[10]

LEE CP, 1983, 41ST P ANN DEV RES C

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