THE EFFECT OF ANNEALING ON THE ELECTRICAL-PROPERTIES OF SELECTIVELY DOPED GAAS/N-ALGAAS HETEROJUNCTION STRUCTURES GROWN BY MBE

被引：19

作者：

ISHIKAWA, T

HIYAMIZU, S

MIMURA, T

SAITO, J

HASHIMOTO, H

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1981年 / 20卷 / 11期

关键词：

D O I：

10.1143/JJAP.20.L814

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：L814 / L816

页数：3

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共 25 条

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[7] ROOM-TEMPERATURE MOBILITY OF TWO-DIMENSIONAL ELECTRON-GAS IN SELECTIVELY DOPED GAAS-N-ALGAAS HETEROJUNCTION STRUCTURES
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[8] EXTREMELY HIGH MOBILITY OF TWO-DIMENSIONAL ELECTRON-GAS IN SELECTIVELY DOPED GAAS-N-ALGAAS HETEROJUNCTION STRUCTURES GROWN BY MBE
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FUJII, T
NANBU, K
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[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (04) : L245 - L248
[9] HIGH MOBILITY OF TWO-DIMENSIONAL ELECTRONS AT THE GAAS-N-ALGAAS HETEROJUNCTION INTERFACE
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[10] THE EFFECT OF GROWTH TEMPERATURE ON THE MOBILITY OF TWO-DIMENSIONAL ELECTRON-GAS IN SELECTIVELY DOPED GAAS-N-ALGAAS HETEROSTRUCTURES GROWN BY MBE
HIYAMIZU, S
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MIMURA, T
NANBU, K
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HASHIMOTO, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (06) : L455 - L458