共 10 条
- [1] TWO-DIMENSIONAL ELECTRON-GAS MESFET STRUCTURE[J]. ELECTRONICS LETTERS, 1980, 16 (17) : 667 - 668DELAGEBEAUDEUF, DDELESCLUSE, PETIENNE, PLAVIRON, MCHAPLART, JLINH, NT
- [2] ELECTRON MOBILITIES IN MODULATION-DOPED SEMICONDUCTOR HETEROJUNCTION SUPER-LATTICES[J]. APPLIED PHYSICS LETTERS, 1978, 33 (07) : 665 - 667DINGLE, RSTORMER, HLGOSSARD, ACWIEGMANN, W
- [3] HIGH MOBILITY OF TWO-DIMENSIONAL ELECTRONS AT THE GAAS-N-ALGAAS HETEROJUNCTION INTERFACE[J]. APPLIED PHYSICS LETTERS, 1980, 37 (09) : 805 - 807HIYAMIZU, SMIMURA, TFUJII, TNANB, K
- [4] A NEW FIELD-EFFECT TRANSISTOR WITH SELECTIVELY DOPED GAAS-N-ALXGA1-XAS HETEROJUNCTIONS[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (05) : L225 - L227MIMURA, THIYAMIZU, SFUJII, TNANBU, K
- [6] GROWTH-CONDITIONS TO ACHIEVE MOBILITY ENHANCEMENT IN ALXGA1-XAS-GAAS HETEROJUNCTIONS BY MBE[J]. ELECTRONICS LETTERS, 1980, 16 (19) : 753 - 754MORKOC, HWITKOWSKI, LCDRUMMOND, TJSTANCHAK, CMCHO, AYSTREETMAN, BG
- [7] 2-DIMENSIONAL ELECTRON-GAS AT A SEMICONDUCTOR-SEMICONDUCTOR INTERFACE[J]. SOLID STATE COMMUNICATIONS, 1979, 29 (10) : 705 - 709STORMER, HLDINGLE, RGOSSARD, ACWIEGMANN, WSTURGE, MD
- [8] TWO-DIMENSIONAL ELECTRON-GAS AT DIFFERENTIALLY DOPED GAAS-ALXGA1-XAS HETEROJUNCTION INTERFACE[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (05): : 1517 - 1519STORMER, HLDINGLE, RGOSSARD, ACWIEGMANN, WSTURGE, MD
- [9] OBSERVATION OF 2-DIMENSIONAL ELECTRONS IN LPE-GROWN GAAS-ALXGA1-XAS HETEROJUNCTIONS[J]. APPLIED PHYSICS LETTERS, 1979, 35 (02) : 99 - 101TSUI, DCLOGAN, RA
- [10] WITKOWSKI LC, UNPUBLISHED