REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION STUDIES OF PRINCIPAL STREAK INTENSITY PROFILES AND ADATOM COVERAGE OF (100) GAAS GROWN BY MOLECULAR-BEAM EPITAXY

被引：4

作者：

FARLEY, CW ^{[1
]}

STREETMAN, BG ^{[1
]}

机构：

[1] UNIV TEXAS,MICROELECTR RES CTR,AUSTIN,TX 78712

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1988年 / 6卷 / 02期

关键词：

D O I：

10.1116/1.584365

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：749 / 753

页数：5

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