INVESTIGATION OF SURFACE-ROUGHNESS OF MOLECULAR-BEAM EPITAXY GA1-XALXAS LAYERS AND ITS CONSEQUENCES ON GAAS/GA1-XALXAS HETEROSTRUCTURES

被引：54

作者：

ALEXANDRE, F

GOLDSTEIN, L

LEROUX, G

JONCOUR, MC

THIBIERGE, H

RAO, EVK

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1985年 / 3卷 / 04期

关键词：

D O I：

10.1116/1.583020

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：950 / 955

页数：6

共 15 条

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