IMPURITY TRAPPING, INTERFACE STRUCTURE, AND LUMINESCENCE OF GAAS QUANTUM WELLS GROWN BY MOLECULAR-BEAM EPITAXY

被引：169

作者：

PETROFF, PM

MILLER, RC

GOSSARD, AC

WIEGMANN, W

机构：

来源：

APPLIED PHYSICS LETTERS | 1984年 / 44卷 / 02期

关键词：

D O I：

10.1063/1.94715

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：217 / 219

页数：3

共 11 条

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[6] CRYSTAL-GROWTH KINETICS IN (GAAS)N-(ALAS)M SUPER-LATTICES DEPOSITED BY MOLECULAR-BEAM EPITAXY .1. GROWTH ON SINGULAR (100)GAAS SUBSTRATES [J].

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[7] LUMINESCENCE PROPERTIES OF GAAS-GA1-XALX AS DOUBLE HETEROSTRUCTURES AND MULTIQUANTUM-WELL SUPER-LATTICES GROWN BY MOLECULAR-BEAM EPITAXY [J].

PETROFF, PM ;

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[8]

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[9]

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[10] OPTICAL CHARACTERIZATION OF INTERFACE DISORDER IN GAAS-GA1-XALXAS MULTI-QUANTUM WELL STRUCTURES [J].

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