USE OF A SUPER-LATTICE TO ENHANCE THE INTERFACE PROPERTIES BETWEEN 2 BULK HETEROLAYERS

被引：92

作者：

DRUMMOND, TJ ^{[1
]}

KLEM, J ^{[1
]}

ARNOLD, D ^{[1
]}

FISCHER, R ^{[1
]}

THORNE, RE ^{[1
]}

LYONS, WG ^{[1
]}

MORKOC, H ^{[1
]}

机构：

[1] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

来源：

APPLIED PHYSICS LETTERS | 1983年 / 42卷 / 07期

关键词：

D O I：

10.1063/1.94021

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：615 / 617

页数：3

共 16 条

[1] ELECTRON MOBILITIES IN MODULATION-DOPED SEMICONDUCTOR HETEROJUNCTION SUPER-LATTICES
DINGLE, R
STORMER, HL
GOSSARD, AC
WIEGMANN, W
[J]. APPLIED PHYSICS LETTERS, 1978, 33 (07) : 665 - 667
[2] INFLUENCE OF SUBSTRATE-TEMPERATURE ON ELECTRON-MOBILITY IN NORMAL AND INVERTED SINGLE PERIOD MODULATION DOPED ALXGA1-XAS/GAAS HETEROJUNCTIONS
DRUMMOND, TJ
FISCHER, R
MILLER, P
MORKOC, H
CHO, AY
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (02): : 684 - 688
[3] TRANSPORT IN MODULATION-DOPED STRUCTURES (ALXGA1-XAS/GAAS) AND CORRELATIONS WITH MONTE-CARLO CALCULATIONS (GAAS)
DRUMMOND, TJ
KOPP, W
MORKOC, H
KEEVER, M
[J]. APPLIED PHYSICS LETTERS, 1982, 41 (03) : 277 - 279
[4] PHOTOCONDUCTIVITY EFFECTS IN EXTREMELY HIGH MOBILITY MODULATION-DOPED (AL,GA)AS/GAAS HETEROSTRUCTURES
DRUMMOND, TJ
KOPP, W
FISCHER, R
MORKOC, H
THORNE, RE
CHO, AY
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (02) : 1238 - 1240
[5] ELECTRON-MOBILITY IN SINGLE AND MULTIPLE PERIOD MODULATION-DOPED (AL,GA)AS/GAAS HETEROSTRUCTURES
DRUMMOND, TJ
KOPP, W
KEEVER, M
MORKOC, H
CHO, AY
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (02) : 1023 - 1028
[6] DEPENDENCE OF ELECTRON-MOBILITY ON SPATIAL SEPARATION OF ELECTRONS AND DONORS IN ALXGA1-XAS-GAAS HETEROSTRUCTURES
DRUMMOND, TJ
MORKOC, H
CHO, AY
[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (03) : 1380 - 1386
[7] GROWTH AND PHOTO-LUMINESCENCE CHARACTERIZATION OF A GAASXP1-X/GAP STRAINED-LAYER SUPER-LATTICE
GOURLEY, PL
BIEFELD, RM
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (02): : 473 - 475
[8] USE OF A GAAS SMOOTHING LAYER TO IMPROVE THE HETEROINTERFACE OF GAAS/ALXGA1-XAS FIELD-EFFECT TRANSISTORS
KOPP, W
SU, SL
FISCHER, R
LYONS, WG
THORNE, RE
DRUMMOND, TJ
MORKOC, H
CHO, AY
[J]. APPLIED PHYSICS LETTERS, 1982, 41 (06) : 563 - 565
[9] ALMOST PERFECT EPITAXIAL MULTILAYERS
MATTHEWS, JW
BLAKESLEE, AE
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (04): : 989 - 991
[10] OBSERVATION OF DEEP LEVELS ASSOCIATED WITH THE GAAS ALXGA1-X AS INTERFACE GROWN BY MOLECULAR-BEAM EPITAXY
MCAFEE, SR
LANG, DV
TSANG, WT
[J]. APPLIED PHYSICS LETTERS, 1982, 40 (06) : 520 - 522

← 1 2 →