TRANSPORT IN MODULATION-DOPED STRUCTURES (ALXGA1-XAS/GAAS) AND CORRELATIONS WITH MONTE-CARLO CALCULATIONS (GAAS)

被引：48

作者：

DRUMMOND, TJ ^{[1
]}

KOPP, W ^{[1
]}

MORKOC, H ^{[1
]}

KEEVER, M ^{[1
]}

机构：

[1] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

来源：

APPLIED PHYSICS LETTERS | 1982年 / 41卷 / 03期

关键词：

D O I：

10.1063/1.93500

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：277 / 279

页数：3

共 15 条

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[2] EXPERIMENTAL AND THEORETICAL ELECTRON-MOBILITY OF MODULATION DOPED ALXGA1-XAS-GAAS HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY [J].

DRUMMOND, TJ ;

MORKOC, H ;

HESS, K ;

CHO, AY .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (08) :5231-5234

[3] FIELD-DEPENDENCE OF MOBILITY IN AL0.2GA0.8AS-GAAS HETEROJUNCTIONS AT VERY LOW FIELDS [J].

DRUMMOND, TJ ;

KEEVER, M ;

KOPP, W ;

MORKOC, H ;

HESS, K ;

STREETMAN, BG ;

CHO, AY .

ELECTRONICS LETTERS, 1981, 17 (15) :545-547

[4] PHOTOCONDUCTIVITY EFFECTS IN EXTREMELY HIGH MOBILITY MODULATION-DOPED (AL,GA)AS/GAAS HETEROSTRUCTURES [J].

DRUMMOND, TJ ;

KOPP, W ;

FISCHER, R ;

MORKOC, H ;

THORNE, RE ;

CHO, AY .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (02) :1238-1240

[5] MOLECULAR-BEAM EPITAXY GROWTH OF (AL,GA) AS GAAS HETEROSTRUCTURES [J].

DRUMMOND, TJ ;

MORKOC, H ;

CHO, AY .

JOURNAL OF CRYSTAL GROWTH, 1982, 56 (02) :449-454

[6] DEPENDENCE OF ELECTRON-MOBILITY ON SPATIAL SEPARATION OF ELECTRONS AND DONORS IN ALXGA1-XAS-GAAS HETEROSTRUCTURES [J].

DRUMMOND, TJ ;

MORKOC, H ;

CHO, AY .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (03) :1380-1386

[7] EFFECT OF BACKGROUND DOPING ON THE ELECTRON-MOBILITY OF (AL,GA)AS-GAAS HETEROSTRUCTURES [J].

DRUMMOND, TJ ;

KOPP, W ;

MORKOC, H ;

HESS, K ;

CHO, AY ;

STREETMAN, BG .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (09) :5689-5690

[8] INFLUENCE OF ALXGA1-XAS BUFFER LAYERS ON THE PERFORMANCE OF MODULATION-DOPED FIELD-EFFECT TRANSISTORS [J].

DRUMMOND, TJ ;

KOPP, W ;

THORNE, RE ;

FISCHER, R ;

MORKOC, H .

APPLIED PHYSICS LETTERS, 1982, 40 (10) :879-881

[9] MONTE-CARLO DETERMINATION OF ELECTRON TRANSPORT PROPERTIES IN GALLIUM ARSENIDE [J].

FAWCETT, W ;

BOARDMAN, AD ;

SWAIN, S .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1970, 31 (09) :1963-&

[10]

HIYAMIZU S, 1981, JAPAN J APPL PHY S21, V21, P161

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