FIELD-DEPENDENCE OF MOBILITY IN AL0.2GA0.8AS-GAAS HETEROJUNCTIONS AT VERY LOW FIELDS

被引：56

作者：

DRUMMOND, TJ ^{[1
]}

KEEVER, M ^{[1
]}

KOPP, W ^{[1
]}

MORKOC, H ^{[1
]}

HESS, K ^{[1
]}

STREETMAN, BG ^{[1
]}

CHO, AY ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

ELECTRONICS LETTERS | 1981年 / 17卷 / 15期

关键词：

D O I：

10.1049/el:19810381

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：545 / 547

页数：3

相关论文

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[1] ELECTRON MOBILITIES IN MODULATION-DOPED SEMICONDUCTOR HETEROJUNCTION SUPER-LATTICES
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[J]. APPLIED PHYSICS LETTERS, 1978, 33 (07) : 665 - 667
[2] DEPENDENCE OF ELECTRON-MOBILITY ON SPATIAL SEPARATION OF ELECTRONS AND DONORS IN ALXGA1-XAS-GAAS HETEROSTRUCTURES
DRUMMOND, TJ
MORKOC, H
CHO, AY
[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (03) : 1380 - 1386
[3] 3 PERIOD (A1, GA) AS-GAAS HETEROSTRUCTURES WITH EXTREMELY HIGH MOBILITIES
DRUMMOND, TJ
KOPP, W
MORKOC, H
[J]. ELECTRONICS LETTERS, 1981, 17 (13) : 442 - 444
[4] IMPURITY AND PHONON-SCATTERING IN LAYERED STRUCTURES
HESS, K
[J]. APPLIED PHYSICS LETTERS, 1979, 35 (07) : 484 - 486
[5] HESS K, 1978, PHYSICS NONLINEAR TR, P1
[6] HOLANYAK N, 1980, J APPL PHYS, V51, P1328