MOLECULAR-BEAM EPITAXY GROWTH OF (AL,GA) AS GAAS HETEROSTRUCTURES

被引：44

作者：

DRUMMOND, TJ ^{[1
]}

MORKOC, H ^{[1
]}

CHO, AY ^{[1
]}

机构：

[1] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

来源：

JOURNAL OF CRYSTAL GROWTH | 1982年 / 56卷 / 02期

关键词：

D O I：

10.1016/0022-0248(82)90464-X

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

收藏

页码：449 / 454

页数：6

相关论文

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