USE OF A GAAS SMOOTHING LAYER TO IMPROVE THE HETEROINTERFACE OF GAAS/ALXGA1-XAS FIELD-EFFECT TRANSISTORS

被引：13

作者：

KOPP, W ^{[1
]}

SU, SL ^{[1
]}

FISCHER, R ^{[1
]}

LYONS, WG ^{[1
]}

THORNE, RE ^{[1
]}

DRUMMOND, TJ ^{[1
]}

MORKOC, H ^{[1
]}

CHO, AY ^{[1
]}

机构：

[1] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

来源：

APPLIED PHYSICS LETTERS | 1982年 / 41卷 / 06期

关键词：

D O I：

10.1063/1.93596

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：563 / 565

页数：3

共 10 条

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[7] SHORT-WAVELENGTH CONTINUOUS 300-K PHOTOPUMPED ALXGA1-XAS-GAAS QUANTUM WELL HETEROSTRUCTURE LASER (LAMBDAL GREATER-THAN-OR-EQUAL-TO-7270 A) [J].

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[8] INFLUENCE OF SUBSTRATE-TEMPERATURE ON THE MORPHOLOGY OF ALXGA1-XAS GROWN BY MOLECULAR-BEAM EPITAXY [J].

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[9]

MORKOC H, 1982, IEEE ELECTRON DEVICE, V29

[10] MOLECULAR-BEAM EPITAXIAL GAAS-ALXGA1-XAS HETEROSTRUCTURES FOR METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR APPLICATIONS [J].

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