INFLUENCE OF SUBSTRATE-TEMPERATURE ON THE MORPHOLOGY OF ALXGA1-XAS GROWN BY MOLECULAR-BEAM EPITAXY

被引:69
作者
MORKOC, H [1 ]
DRUMMOND, TJ [1 ]
KOPP, W [1 ]
FISCHER, R [1 ]
机构
[1] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801
关键词
D O I
10.1149/1.2123980
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
引用
收藏
页码:824 / 826
页数:3
相关论文
共 11 条
[1]  
CASEY HC, 1978, HETEROSTRUCTURE LA A
[2]   RECTIFICATION AT N-N GAAS - (GA, AL)AS HETEROJUNCTIONS [J].
CHANDRA, A ;
EASTMAN, LF .
ELECTRONICS LETTERS, 1979, 15 (03) :90-91
[3]   GAAS-ALXGA1-XAS DOUBLE-HETEROSTRUCTURE LASERS PREPARED BY MOLECULAR-BEAM EPITAXY [J].
CHO, AY ;
CASEY, HC .
APPLIED PHYSICS LETTERS, 1974, 25 (05) :288-290
[4]  
CHO AY, 1980, ELECTRON LETT, V16, P59
[5]   DEPENDENCE OF ELECTRON-MOBILITY ON SPATIAL SEPARATION OF ELECTRONS AND DONORS IN ALXGA1-XAS-GAAS HETEROSTRUCTURES [J].
DRUMMOND, TJ ;
MORKOC, H ;
CHO, AY .
JOURNAL OF APPLIED PHYSICS, 1981, 52 (03) :1380-1386
[6]   CLUSTERING AND PHONON EFFECTS IN ALXGA1-XAS-GAAS QUANTUM-WELL HETEROSTRUCTURE LASERS GROWN BY MOLECULAR-BEAM EPITAXY [J].
HOLONYAK, N ;
LAIDIG, WD ;
CAMRAS, MD ;
MORKOC, H ;
DRUMMOND, TJ ;
HESS, K .
SOLID STATE COMMUNICATIONS, 1981, 40 (01) :71-74
[7]   CLUSTERING IN MOLECULAR-BEAM EPITAXIAL ALXGA1-XAS-GAAS QUANTUM-WELL HETEROSTRUCTURE LASERS [J].
HOLONYAK, N ;
LAIDIG, WD ;
CAMRAS, MD ;
MORKOC, H ;
DRUMMOND, TJ ;
HESS, K ;
BURROUGHS, MS .
JOURNAL OF APPLIED PHYSICS, 1981, 52 (12) :7201-7207
[8]   TRANSPORT-PROPERTIES OF SN-DOPED ALXGA1-XAS GROWN BY MOLECULAR-BEAM EPITAXY [J].
MORKOC, H ;
CHO, AY ;
RADICE, C .
JOURNAL OF APPLIED PHYSICS, 1980, 51 (09) :4882-4884
[9]  
THOMPSON GHB, 1980, PHYSICS SEMICONDUCTO
[10]   MOLECULAR-BEAM EPITAXIAL GAAS-ALXGA1-XAS HETEROSTRUCTURES FOR METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR APPLICATIONS [J].
WANG, WI ;
JUDAPRAWIRA, S ;
WOOD, CEC ;
EASTMAN, LF .
APPLIED PHYSICS LETTERS, 1981, 38 (09) :708-710